 |  |  | |
| PartNumber | SIHB30N60E-E3 | SIHB30N60E | SIHB30N60E-GE3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-CH 600V 29A D2PAK | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 29 A | - | - |
| Rds On Drain Source Resistance | 125 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 85 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | E | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 32 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 63 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB30N60E-E3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Vishay |
SIHB30N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | |
| SIHB30N60E-GE3 | MOSFET N-CH 600V 29A D2PAK | ||
| SIHB30N60E-GE3-CUT TAPE | 全新原裝 | ||
| SIHB30N60E | 全新原裝 | ||
| SIHB30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |