RGCL60TS60DGC11

RGCL60TS60DGC11
Mfr. #:
RGCL60TS60DGC11
製造商:
Rohm Semiconductor
描述:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
生命週期:
製造商新產品
數據表:
RGCL60TS60DGC11 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
RGCL60TS60DGC11 更多信息
產品屬性
屬性值
製造商:
羅姆半導體
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-247-3
安裝方式:
通孔
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
1.4 V
最大柵極發射極電壓:
30 V
25 C 時的連續集電極電流:
48 A
Pd - 功耗:
111 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 175 C
打包:
大部分
品牌:
羅姆半導體
柵極-發射極漏電流:
200 nA
產品類別:
IGBT晶體管
出廠包裝數量:
30
子類別:
IGBT
第 # 部分別名:
RGCL60TS60D
Tags
RGCL60TS, RGCL6, RGCL, RGC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 48A 111000mW 3-Pin(3+Tab) TO-247N Bulk
***nell
IGBT, 600V, 48A, 175DEG C, 111W
***ark
Igbt, 600V, 48A, 175Deg C, 111W; Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:111W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
圖片 型號 描述
STGWA40H65DFB

Mfr.#: STGWA40H65DFB

OMO.#: OMO-STGWA40H65DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
STGW30M65DF2

Mfr.#: STGW30M65DF2

OMO.#: OMO-STGW30M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
FGH40T65UQDF-F155

Mfr.#: FGH40T65UQDF-F155

OMO.#: OMO-FGH40T65UQDF-F155

IGBT Transistors 650V FS4 Trench IGBT
FGH40T65SH-F155

Mfr.#: FGH40T65SH-F155

OMO.#: OMO-FGH40T65SH-F155

IGBT Transistors 650V FS Gen3 Trench IGBT
APT50GN60BG

Mfr.#: APT50GN60BG

OMO.#: OMO-APT50GN60BG

IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
APT50GN60BG

Mfr.#: APT50GN60BG

OMO.#: OMO-APT50GN60BG-MICROSEMI

IGBT Transistors
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB-STMICROELECTRONICS

IGBT 600V 60A 260W TO247
STGWA20M65DF2

Mfr.#: STGWA20M65DF2

OMO.#: OMO-STGWA20M65DF2-STMICROELECTRONICS

IGBT TRENCH 650V 40A TO247
可用性
庫存:
440
訂購:
2423
輸入數量:
RGCL60TS60DGC11的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$3.80
US$3.80
10
US$3.23
US$32.30
100
US$2.80
US$280.00
250
US$2.66
US$665.00
500
US$2.38
US$1 190.00
1000
US$2.01
US$2 010.00
2500
US$1.91
US$4 775.00
5000
US$1.84
US$9 200.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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