RGCL60TS

RGCL60TS60GC11 vs RGCL60TS60DGC11 vs RGCL60TS60

 
PartNumberRGCL60TS60GC11RGCL60TS60DGC11RGCL60TS60
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.4 V1.4 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C48 A48 A-
Pd Power Dissipation111 W111 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingBulkBulk-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Part # AliasesRGCL60TS60RGCL60TS60D-
製造商 型號 描述 RFQ
RGCL60TS60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TS60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TS60 全新原裝
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