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FGY75N60SMD

FGY75N60SMD
Mfr. #:
FGY75N60SMD
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 600V, 75A Field Stop IGBT
生命週期:
製造商新產品
數據表:
FGY75N60SMD 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FGY75N60SMD 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
Power-247
安裝方式：
通孔
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.9 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
150 A
Pd - 功耗：
750 W
系列：
FGY75N60SMD
打包：
管子
品牌：
安森美半導體/飛兆半導體
柵極-發射極漏電流：
400 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.269105 oz
Tags
FGY7, FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 120A Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
600V/60A Field Stop IGBT Gen 2 - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital PowerGenerator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3
***rochip
IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247
***nsix Microsemi
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***ical
Trans IGBT Chip N-CH 600V 140A 483000mW 3-Pin(3+Tab) TO-247AD Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***(Formerly Allied Electronics)
G6.2, 600V, 90A, CO-PAK-247AD | Infineon IRGP6690D-EPBF
***ineon
Benefits: Low VCE(ON) and switching losses; Optimized diode for full bridge hard switch converters; Square RBSOA and maximum junction temperature 175C; 5s short circuit SOA; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant | Target Applications: Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGY75N60 Field Stop IGBT
ON Semiconductor FGY75N60 Field Stop IGBT is a second generation IGBT that uses novel field stop IGBT technology and offers optimum performance. This IGBT feature high current capability, low saturation voltage, high input impedance, and fast switching. Typical applications include solar inverters, UPS, welders, and PFC applications.
型號 製造商 描述 庫存 價格
FGY75N60SMD
DISTI # V99:2348_06359063		ON Semiconductor600V/75A FIELD STOP IGBT VER.250
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4240
  • 25:$5.1080
  • 10:$5.3540
  • 1:$6.5065
FGY75N60SMD
DISTI # V36:1790_06359063		ON Semiconductor600V/75A FIELD STOP IGBT VER.54
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4240
  • 25:$5.1080
  • 10:$5.3540
  • 1:$6.5065
FGY75N60SMD
DISTI # FGY75N60SMDFS-ND		ON SemiconductorIGBT 600V 150A 750W POWER-247
RoHS: Compliant
Min Qty: 1
Container: Tube		378In Stock
  • 2700:$3.5000
  • 900:$4.0688
  • 450:$4.4625
  • 25:$5.3812
  • 10:$5.6440
  • 1:$6.2500
FGY75N60SMD
DISTI # 32405190		ON Semiconductor600V/75A FIELD STOP IGBT VER.250
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4360
  • 25:$5.1080
  • 10:$5.3540
  • 2:$5.9150
FGY75N60SMD
DISTI # 31352222		ON Semiconductor600V/75A FIELD STOP IGBT VER.225
  • 150:$3.1442
  • 90:$3.1731
  • 60:$3.2143
  • 30:$3.2353
FGY75N60SMD
DISTI # 32401809		ON Semiconductor600V/75A FIELD STOP IGBT VER.54
  • 500:$3.6800
  • 250:$4.2440
  • 100:$4.4360
  • 25:$5.1080
  • 10:$5.3540
  • 2:$5.9150
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube (Alt: FGY75N60SMD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 13610
  • 1000:€2.7900
  • 500:€3.0900
  • 100:€3.1900
  • 50:€3.2900
  • 25:€3.3900
  • 10:€3.5900
  • 1:€3.8900
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Rail/Tube (Alt: FGY75N60SMD)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 840
  • 300:$3.0864
  • 150:$3.1646
  • 90:$3.2051
  • 60:$3.2468
  • 30:$3.2680
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTrans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Bulk (Alt: FGY75N60SMD)
Min Qty: 90
Container: Bulk		Americas - 0
  • 900:$3.3900
  • 270:$3.4900
  • 450:$3.4900
  • 90:$3.5900
  • 180:$3.5900
FGY75N60SMD
DISTI # 88T3388		ON SemiconductorIGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 RoHS Compliant: Yes2407
  • 500:$4.5300
  • 250:$4.9100
  • 100:$5.1000
  • 50:$5.4400
  • 25:$5.7800
  • 10:$6.0400
  • 1:$6.6100
FGY75N60SMD.
DISTI # 27AC5741		Fairchild Semiconductor CorporationFS2PIGBT TO247 75A 600V ROHS COMPLIANT: YES0
  • 300:$3.1300
  • 150:$3.2100
  • 62:$3.2500
  • 32:$3.2900
  • 1:$3.3100
FGY75N60SMD
DISTI # 512-FGY75N60SMD		ON SemiconductorIGBT Transistors 600V, 75A Field Stop IGBT
RoHS: Compliant		507
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
FGY75N60SMDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		218
  • 1000:$3.6600
  • 500:$3.8500
  • 100:$4.0100
  • 25:$4.1800
  • 1:$4.5000
FGY75N60SMD
DISTI # 7599302		ON SemiconductorIGBT FIELD STOP 600V 150A 1.9V POWER-247, EA92
  • 15:£4.7400
  • 6:£5.0000
  • 1:£5.2600
FGY75N60SMD
DISTI # 7599302P		ON SemiconductorIGBT FIELD STOP 600V 150A 1.9V POWER-247, TU1138
  • 15:£4.7400
  • 6:£5.0000
FGY75N60SMD
DISTI # FGY75N60SMD		ON SemiconductorTransistor: IGBT,600V,75A,375W,TO247-312
  • 1:$8.9900
  • 5:$7.7400
  • 25:$6.2100
  • 100:$5.5800
FGY75N60SMD
DISTI # 2083380		ON SemiconductorIGBT, FIELD STOP, 600V,75A,POWER-247
RoHS: Compliant		2407
  • 500:$5.9700
  • 250:$6.5500
  • 100:$6.8500
  • 25:$7.8900
  • 10:$8.2800
  • 1:$9.1500
FGY75N60SMD
DISTI # 2083380		ON SemiconductorIGBT, FIELD STOP, 600V,75A,POWER-2472597
  • 500:£2.6600
  • 250:£2.9300
  • 100:£3.0600
  • 10:£3.5200
  • 1:£5.0200
FGY75N60SMD
DISTI # XSKDRABV0030436		ON SEMICONDUCTOR 
RoHS: Compliant		10210 in Stock0 on Order
  • 10210:$4.6800
  • 450:$5.0200
圖片 型號 描述
LM6172IMX/NOPB

Mfr.#: LM6172IMX/NOPB

OMO.#: OMO-LM6172IMX-NOPB

 High Speed Operational Amplifiers DUAL HI-SPD LO-PWR LO-DIST VOL FDBK AMP
MCP3425A0T-E/CH

Mfr.#: MCP3425A0T-E/CH

OMO.#: OMO-MCP3425A0T-E-CH

 Analog to Digital Converters - ADC 16-B delta-sigma ADC Sngl Ch 15sps
FGH60N60SMD

Mfr.#: FGH60N60SMD

OMO.#: OMO-FGH60N60SMD

 IGBT Transistors 600V/60A Field Stop IGBT ver. 2
STFH24N60M2

Mfr.#: STFH24N60M2

OMO.#: OMO-STFH24N60M2

 MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
PR-002A

Mfr.#: PR-002A

OMO.#: OMO-PR-002A

 DC Power Connectors Cable Mount Jack 2x5.5mm
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2

 Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2-STMICROELECTRONICS

 全新原裝
LM6172IMX/NOPB

Mfr.#: LM6172IMX/NOPB

OMO.#: OMO-LM6172IMX-NOPB-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps DUAL HI-SPD LO-PWR LO-DIST VOL FDBK AMP
STFH24N60M2

Mfr.#: STFH24N60M2

OMO.#: OMO-STFH24N60M2-STMICROELECTRONICS

 MOSFET N-CH 600V 18A TO220FP
可用性
庫存:
479
訂購:
2462
輸入數量:
FGY75N60SMD的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.95
US$5.95
10
US$5.38
US$53.80
25
US$5.13
US$128.25
100
US$4.45
US$445.00
250
US$4.26
US$1 065.00
500
US$3.88
US$1 940.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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