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STFH24N60M2

STFH24N60M2
Mfr. #:
STFH24N60M2
製造商:
STMicroelectronics
描述:
MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
生命週期:
製造商新產品
數據表:
STFH24N60M2 數據表
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ECAD Model:
更多信息:
STFH24N60M2 更多信息 STFH24N60M2 Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220FP-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
18 A
Rds On - 漏源電阻：
168 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
25 V
Qg - 門電荷：
29 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
30 W
配置：
單身的
頻道模式：
增強
商品名：
網狀網
打包：
管子
系列：
STFH24N60M2
晶體管類型：
1 N-Channel
品牌：
意法半導體
秋季時間：
15 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
920
子類別：
MOSFET
典型關斷延遲時間：
60 ns
典型的開啟延遲時間：
14 ns
單位重量：
0.003527 oz
Tags
STFH, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ure Electronics
N-Channel 600 V 190 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 18A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh, M2 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF
***ow.cn
Trans MOSFET N-CH 600V 19.3A 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 19.3A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R280CEXKSA1
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
*** Electronics
IPW60R190C6 Infineon MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6 Tube RoHS
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,20.2A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:151W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.2A; Power Dissipation Pd:151W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 15A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R380CEXKSA1
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
***-Wing Technology
STMICROELECTRONICS STP18NM60N Power MOSFET, N Channel, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
***ure Electronics
Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube
***ark
Mosfet, N Ch, 600V, 13A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; On Resistance Rds(On):0.26Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220FP-3WideCreepage MOSFETs ROHS
***nell
MOSFET, N-CH, 600V, 13A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
*** Source Electronics
MOSFET N-CH 600V 13A TO-220FP / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube
*** Electronics
STF18NM60N STMicroelectronics MOSFET N-Channel 600V 0.27ohm 13A MDmesh TO220FP RoHS
***ure Electronics
N-Channel 600 V 285 mO 35 nC Flange Mount MDmesh™ II Power Mosfet - TO-220FP
***enic
600V 13A 30W 285m´Î@10V6.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型號 製造商 描述 庫存 價格
STFH24N60M2
DISTI # V79:2366_22741371		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube249
  • 5000:$1.3146
  • 2500:$1.4680
  • 1000:$1.5119
  • 500:$1.6346
  • 100:$1.8420
  • 10:$2.3339
  • 1:$3.0090
STFH24N60M2
DISTI # V99:2348_17701881		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube245
  • 5000:$1.3146
  • 2500:$1.4680
  • 1000:$1.5119
  • 500:$1.6346
  • 100:$1.8420
  • 10:$2.3339
  • 1:$3.0090
STFH24N60M2
DISTI # V36:1790_16518755		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube0
    STFH24N60M2
    DISTI # 497-16596-5-ND    		STMicroelectronicsMOSFET N-CH 600V 18A TO220FP
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		144In Stock
    • 5520:$1.3160
    • 2760:$1.3324
    • 920:$1.7272
    • 100:$2.1023
    • 25:$2.4676
    • 10:$2.6160
    • 1:$2.9100
    STFH24N60M2
    DISTI # 31081665    		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube249
    • 5000:$1.4689
    • 2500:$1.5012
    • 1000:$1.5935
    • 500:$1.7572
    • 100:$2.0120
    • 10:$2.5089
    • 6:$3.2347
    STFH24N60M2
    DISTI # 25954552    		STMicroelectronicsTrans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube245
    • 5000:$1.4689
    • 2500:$1.5012
    • 1000:$1.5935
    • 500:$1.7572
    • 100:$2.0120
    • 10:$2.5089
    • 6:$3.2347
    STFH24N60M2
    DISTI # STFH24N60M2    		STMicroelectronicsTrans MOSFET N-CH 650V 18A 3-Pin TO-220FP Tube - Bulk (Alt: STFH24N60M2)
    Min Qty: 920
    Container: Bulk    		Americas - 0
    • 2760:$1.1900
    • 4600:$1.1900
    • 9200:$1.1900
    • 1840:$1.2900
    • 920:$1.3900
    STFH24N60M2
    DISTI # 92Y9451    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
    • 5000:$1.2300
    • 2500:$1.2800
    • 1000:$1.3700
    • 500:$1.6600
    • 100:$1.9000
    • 10:$2.3700
    • 1:$2.7900
    STFH24N60M2
    DISTI # 511-STFH24N60M2    		STMicroelectronicsMOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
    RoHS: Compliant    		1150
    • 1:$2.7600
    • 10:$2.3500
    • 100:$1.8800
    • 500:$1.6400
    • 1000:$1.3600
    • 2500:$1.2700
    • 5000:$1.2200
    STFH24N60M2
    DISTI # 1241108P    		STMicroelectronicsSTMICROELECTRONICSMOSFETSTFH24N60M2, TU840
    • 50:£0.8740
    STFH24N60M2
    DISTI # 2602656    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-30
    • 500:£1.2700
    • 250:£1.3600
    • 100:£1.4500
    • 10:£1.8300
    • 1:£2.4200
    STFH24N60M2
    DISTI # 2602656    		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP-3
    RoHS: Compliant    		0
    • 2760:$2.1400
    • 1840:$2.3000
    • 920:$2.5000
    • 100:$3.5600
    • 10:$4.4300
    • 1:$4.9000
    圖片 型號 描述
    LM6172IMX/NOPB

    Mfr.#: LM6172IMX/NOPB

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    TS27M2CDT

    Mfr.#: TS27M2CDT

    OMO.#: OMO-TS27M2CDT

    		 Operational Amplifiers - Op Amps Dual Prec Low-Power
    IR2304SPBF

    Mfr.#: IR2304SPBF

    OMO.#: OMO-IR2304SPBF

    		 Gate Drivers HALF BRDG DRVR 600V 60mA 220ns
    FGY75N60SMD

    Mfr.#: FGY75N60SMD

    OMO.#: OMO-FGY75N60SMD

    		 IGBT Transistors 600V, 75A Field Stop IGBT
    STFU24N60M2

    Mfr.#: STFU24N60M2

    OMO.#: OMO-STFU24N60M2

    		 MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
    IRFR5305TRPBF

    Mfr.#: IRFR5305TRPBF

    OMO.#: OMO-IRFR5305TRPBF

    		 MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC
    FQP55N10

    Mfr.#: FQP55N10

    OMO.#: OMO-FQP55N10

    		 MOSFET 100V N-Channel QFET
    UC3844BVD1G

    Mfr.#: UC3844BVD1G

    OMO.#: OMO-UC3844BVD1G

    		 Switching Controllers 52kHz 1A Current PWM w/48% Duty Cycle Max
    WRG32F2FBBNN

    Mfr.#: WRG32F2FBBNN

    OMO.#: OMO-WRG32F2FBBNN

    		 Rocker Switches DPST BLK 16A ON-OFF
    LM35DT/NOPB

    Mfr.#: LM35DT/NOPB

    OMO.#: OMO-LM35DT-NOPB

    		 Board Mount Temperature Sensors PREC CENTIGRADE TEMP SENSOR
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    STFH24N60M2的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.76
    US$2.76
    10
    US$2.35
    US$23.50
    100
    US$1.88
    US$188.00
    500
    US$1.64
    US$820.00
    1000
    US$1.36
    US$1 360.00
    2500
    US$1.27
    US$3 175.00
    5000
    US$1.22
    US$6 100.00
    10000
    US$1.17
    US$11 700.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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