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MR45V200BRAZAARL

MR45V200BRAZAARL
Mfr. #:
MR45V200BRAZAARL
製造商:
Rohm Semiconductor
描述:
F-RAM FeRAM/2M 256K x 8 DIP8
生命週期:
製造商新產品
數據表:
MR45V200BRAZAARL 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MR45V200BRAZAARL 更多信息
產品屬性
屬性值
製造商：
羅姆半導體
產品分類：
內存
RoHS：
Y
安裝方式：
通孔
包裝/案例：
DIP-8
內存大小：
2 Mbit
接口類型：
SPI
組織：
256 k x 8
電源電壓 - 最小值：
2.7 V
電源電壓 - 最大值：
3.6 V
最低工作溫度：
- 40 C
最高工作溫度：
+ 85 C
打包：
捲軸
品牌：
羅姆半導體
工作電源電壓：
2.7 V to 3.6 V
產品類別：
隨機存取存儲器
出廠包裝數量：
1400
子類別：
內存和數據存儲
Tags
MR45V2, MR45V, MR45, MR4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
2Mbit 256k x 8-bit FeRAM
ROHM Semiconductor 2Mbit 256k x 8-bit FeRAM is a non-volatile Ferroelectric Random Access Memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The 2Mbit FeRAM is accessed using a serial peripheral interface. This FeRAM device eliminates battery backup required to hold data as cells are nonvolatile. The 2Mbit FeRAM memories offer no mechanisms of erasing and programming memory cells and blocks as those are used for various EEPROMs. This FeRAM device is guaranteed for the write/read tolerance of 1012 cycles/bit and the rewrite count can be extended significantly that is used in various applications.
MR4xVx FeRAM Series
ROHM Semiconductor MR4xVx FeRAM Series are Ferro-electric Random Access Memory from 32kbit to 2Mbit configuration developed by ferroelectrics process and CMOS process technology. These MR4xVx FeRAM series offer no backup by battery, high-speed random read/write, rewrite up to 1 trillion times, and low power consumption for various applications. The FeRAM ensures high quality and uninterrupted supply within ROHM group. Typical applications include car navigation, car audio, car electronics, PLC, industrial printers, and TV for business.
型號 製造商 描述 庫存 價格
MR45V200BRAZAARL
DISTI # MR45V200BRAZAARL-ND		ROHM SemiconductorFERAM / 2MBIT (256KB X 8) / SPI
RoHS: Compliant
Min Qty: 1
Container: Tube		1398In Stock
  • 1400:$5.2447
  • 500:$5.4351
  • 250:$5.7148
  • 100:$5.8935
  • 50:$6.5696
  • 25:$6.5928
  • 10:$6.7330
  • 1:$7.3200
MR45V200BRAZAARL
DISTI # 755-MR45V200BRAZAARL		ROHM SemiconductorF-RAM FeRAM/2M 256K x 8 DIP8
RoHS: Compliant		2783
  • 1:$8.8100
  • 10:$7.9600
  • 25:$7.5900
  • 100:$6.5900
  • 250:$6.3000
  • 500:$5.7400
  • 1400:$5.0000
MR45V256AMAZAAT-LROHM SemiconductorF-RAM 256K,SPI,3.3V FeRAM 15MHzAmericas -
    MR45V200BRAZAARLROHM SemiconductorF-RAM FeRAM/2M 256K x 8 DIP8Americas -
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      可用性
      庫存:
      Available
      訂購:
      1985
      輸入數量:
      MR45V200BRAZAARL的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$8.81
      US$8.81
      10
      US$7.96
      US$79.60
      25
      US$7.59
      US$189.75
      100
      US$6.59
      US$659.00
      250
      US$6.30
      US$1 575.00
      500
      US$5.74
      US$2 870.00
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