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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| FDP3632 DISTI # V36:1790_06359829 | ON Semiconductor | ZO-220AB, SINGLE, N-CH, 100V, | 594 |
|
| FDP3632 DISTI # FDP3632-ND | ON Semiconductor | MOSFET N-CH 100V 80A TO-220AB Min Qty: 1 Container: Tube | 1In Stock |
|
| FDP3632 DISTI # 34822108 | ON Semiconductor | ZO-220AB, SINGLE, N-CH, 100V, | 8800 |
|
| FDP3632 DISTI # 33926412 | ON Semiconductor | ZO-220AB, SINGLE, N-CH, 100V, | 594 |
|
| FDP3632 DISTI # FDP3632 | ON Semiconductor | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632) RoHS: Compliant Min Qty: 50 Container: Tube | Americas - 9850 |
|
| FDP3632 DISTI # FDP3632 | ON Semiconductor | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP3632) RoHS: Compliant Min Qty: 183 Container: Bulk | Americas - 0 | |
| FDP3632 DISTI # FDP3632 | ON Semiconductor | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP3632) RoHS: Compliant Min Qty: 800 Container: Tube | Asia - 0 |
|
| FDP3632. DISTI # 25AC9560 | Fairchild Semiconductor Corporation | FET 100V 9.0 MOHM TO220 ROHS COMPLIANT: YES RoHS: Compliant | 9050 |
|
| FDP3632 DISTI # 512-FDP3632 | ON Semiconductor | MOSFET 100V 80a .9 Ohms/VGS=1V RoHS: Compliant | 841 |
|
| FDP3632 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 9482 |
|
| FDP3632 | Fairchild Semiconductor Corporation | 22 | ||
| FDP3632 DISTI # FDP3632 | ON Semiconductor | Transistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB | 18 |
|
| FDP3632 DISTI # 1095015 | ON Semiconductor | RoHS: Compliant | 0 |
|
| FDP3632 DISTI # XSKDRABV0019246 | ON SEMICONDUCTOR | TO-220 3LTO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS RoHS: Compliant | 1800 in Stock0 on Order |
|
| FDP3632 DISTI # XSKDRABS0005685 | ON SEMICONDUCTOR | TO-220 3LTO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS RoHS: Compliant | 640 in Stock0 on Order |
|
| FDP3632 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 100 | |
| FDP3632 | ISC | TO-220 | 5000 |
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: FDP3672 OMO.#: OMO-FDP3672 |
MOSFET 105V 41a 0.033 Ohms/VGS=10V |
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Mfr.#: FDP3651U OMO.#: OMO-FDP3651U |
MOSFET 100V 80A 15 OHM NCH POWER TREN |
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Mfr.#: FDP3632 OMO.#: OMO-FDP3632-ON-SEMICONDUCTOR |
MOSFET N-CH 100V 80A TO-220AB |
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全新原裝 | |
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Mfr.#: FDP3632-NL OMO.#: OMO-FDP3632-NL-1190 |
全新原裝 |
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Mfr.#: FDP3652_NL OMO.#: OMO-FDP3652-NL-1190 |
全新原裝 |
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Mfr.#: FDP3682NL OMO.#: OMO-FDP3682NL-1190 |
全新原裝 |
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Mfr.#: FDP3682_Q OMO.#: OMO-FDP3682-Q-1190 |
MOSFET 100V 32a .36Ohm/VGS=1V |
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Mfr.#: FDP3632_Q OMO.#: OMO-FDP3632-Q-1190 |
MOSFET 100V 80a .9 Ohms/VGS=1V |
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Mfr.#: FDP3652_Q OMO.#: OMO-FDP3652-Q-1190 |
MOSFET 100V 61a 0.016 Ohm |