IRF9910PBF

Mfr. #:: IRF9910PBF
製造商:: Infineon Technologies
描述:: MOSFET 2N-CH 20V 10A/12A 8-SOIC
生命週期:: 製造商新產品
數據表:: IRF9910PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF9910PBF Datasheet IRF9910PBF Datasheet (P4-P6)IRF9910PBF Datasheet (P7-P9)IRF9910PBF Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商: 國際整流器

產品分類: 晶體管 - FET、MOSFET - 單

打包: 管子

單位重量: 0.019048 oz

安裝方式: 貼片/貼片

包裝盒: SOIC-8

技術: 矽

通道數: 2 Channel

配置: 雙重的

晶體管型: 2 N-Channel

鈀功耗: 2 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 4.5 ns 7.5 ns

上升時間: 10 ns 14 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 10 A

Vds-漏-源-擊穿電壓: 20 V

Rds-On-Drain-Source-Resistance: 18.3 mOhms

晶體管極性: N通道

典型關斷延遲時間: 9.2 ns 15 ns

典型開啟延遲時間: 6.3 ns 8.3 ns

通道模式: 增強

Tags: IRF991, IRF99, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9910PBF 描述

***ernational Rectifier: 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC

***Components: MOSFET Dual N-Channel 20V 10A/12A SOIC8

***ied Electronics & Automation: 20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE

***i-Key: MOSFET 2N-CH 20V 10A 8-SOIC

***ineon: Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
IRF9910TRPBF DISTI # IRF9910PBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4873In Stock	1000:$0.5864 500:$0.7266 100:$0.9193 10:$1.1480 1:$1.2900
IRF9910TRPBF DISTI # IRF9910PBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4873In Stock	1000:$0.5864 500:$0.7266 100:$0.9193 10:$1.1480 1:$1.2900
IRF9910TRPBF DISTI # IRF9910PBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.5353
IRF9910PBF DISTI # IRF9910PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF9910PBF DISTI # IRF9910PBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC - Rail/Tube (Alt: IRF9910PBF) RoHS: Compliant Min Qty: 3800 Container: Tube	Americas - 94
IRF9910PBF DISTI # IRF9910PBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC (Alt: IRF9910PBF) RoHS: Compliant Min Qty: 3800	Asia - 0
IRF9910PBF DISTI # 942-IRF9910PBF	Infineon Technologies AG	MOSFET 20V DUAL N-CH HEXFET 13.4mOhms RoHS: Compliant	0
IRF9910PBF	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA RoHS: Compliant	170	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
IRF9910PBF	International Rectifier		24
IRF9910PBF	International Rectifier		8	5:$1.0640 1:$1.3300
IRF9910PBF-ND	International Rectifier		8	5:$1.0640 1:$1.3300
IRF9910PBF DISTI # IRF9910PBF	Infineon Technologies AG	Transistor: N-MOSFET x2,unipolar,20V,10A,2W,SO8	158	1:$1.1000 3:$0.9400 10:$0.8000 95:$0.6900
IRF9910PBF	International Rectifier	RoHS: Compliant	Europe - 1605

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