IRF9953PBF

Mfr. #:: IRF9953PBF
製造商:: Infineon Technologies
描述:: MOSFET 2P-CH 30V 2.3A 8-SOIC
生命週期:: 製造商新產品
數據表:: IRF9953PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: FET - 陣列

系列: 十六進制

打包: 管替代包裝

單位重量: 0.019048 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-SO

配置: 雙重的

FET型: 2 P-Channel (Dual)

最大功率: 2W

晶體管型: 2 P-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 190pF @ 15V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 2.3A

Rds-On-Max-Id-Vgs: 250 mOhm @ 1A, 10V

Vgs-th-Max-Id: 1V @ 250μA

柵極電荷-Qg-Vgs: 12nC @ 10V

鈀功耗: 2 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 6.9 ns

上升時間: 14 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: - 2.3 A

Vds-漏-源-擊穿電壓: - 30 V

Rds-On-Drain-Source-Resistance: 250 mOhms

晶體管極性: P-通道

典型關斷延遲時間: 20 ns

典型開啟延遲時間: 9.7 ns

Qg-門電荷: 6.9 nC

通道模式: 增強

Tags: IRF9953, IRF995, IRF99, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9953PBF 描述

***ied Electronics & Automation: MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.25Ohm;ID -2.3A;SO-8;PD 2W;VGS +/-20V

***ure Electronics: IRF9953PBF: 30 V 2.3 A 250 mOhm SMT Hexfet Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dynamic dv/dt Rating; Fast Switching; Dual P-Channel MOSFET

***ernational Rectifier: -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET P-CH 30V 2.3A 8-Pin SOIC

***Components: MOSFET P-Channel 30V 2.3A SOIC8

***i-Key: MOSFET 2P-CH 30V 2.3A 8-SOIC

***ronik: 2xP-CH 30V 2,3A 250mOhm SO-8 RoHSconf

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.3A; On Resistance, Rds(on):250mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual P; Voltage, Vds Typ:-30V; Current, Id Cont:2.3A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:F9953; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:2; Voltage, Vds Max:30V; Width, External:4.05mm

***ment14 APAC: MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:10A; Row Pitch:6.3mm; SMD Marking:F9953; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

Market price

型號	製造商	描述	庫存	價格
IRF9953TRPBF DISTI # IRF9953PBFCT-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953TRPBF DISTI # IRF9953PBFDKR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2738In Stock	1000:$0.4143 500:$0.5079 100:$0.6715 10:$0.8580 1:$0.9700
IRF9953PBF DISTI # IRF9953PBF-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF9953TRPBF DISTI # IRF9953PBFTR-ND	Infineon Technologies AG	MOSFET 2P-CH 30V 2.3A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3683
IRF9953PBF-EL DISTI # IRF9953PBF-EL	Infineon Technologies AG	Trans MOSFET P-CH 30V 2.3A 8-Pin SO Tube (Alt: IRF9953PBF-EL) RoHS: Compliant Min Qty: 95 Container: Tube	Europe - 0
IRF9953PBF DISTI # 97K2255	Infineon Technologies AG	MOSFET Transistor, Dual P Channel, 2.3 A, 30 V, 250 mohm, -10 V, -1 V RoHS Compliant: Yes	0
IRF9953PBF DISTI # 942-IRF9953PBF	Infineon Technologies AG	MOSFET DUAL -30V P-CH 20V VGS MAX RoHS: Compliant	0
IRF9953PBF	International Rectifier	INSTOCK	130
IRF9953PBF DISTI # 9102230	Infineon Technologies AG	MOSFET, DUAL, PP, LOGIC, SO-8 RoHS: Compliant	0	1:$1.4400 10:$1.1800 100:$0.9280 1000:$0.7800 2000:$0.6870

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