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SIHP065N60E-GE3

SIHP065N60E-GE3
Mfr. #:
SIHP065N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs TO-220AB
生命週期:
製造商新產品
數據表:
SIHP065N60E-GE3 數據表
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HTML Datasheet:
SIHP065N60E-GE3 DatasheetSIHP065N60E-GE3 Datasheet (P4-P6)SIHP065N60E-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SIHP065N60E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220AB-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
40 A
Rds On - 漏源電阻：
57 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
98 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
250 W
配置：
單身的
頻道模式：
增強
系列：
E
品牌：
威世 / Siliconix
秋季時間：
13 ns
產品類別：
MOSFET
上升時間：
46 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
54 ns
典型的開啟延遲時間：
28 ns
單位重量：
0.063493 oz
Tags
SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 40A 3-Pin TO-220AB
***
N-CHANNEL 600V E SERIES P-MSFT
***ark
Power Mosfet, N Channel, 40A, 600V; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Rohs Compliant: Yes
SiHP065N60E 600V E Series Power MOSFET
Vishay Siliconix SiHP065N60E 600V E Series Power MOSFETs are built on Vishay's latest energy-efficient E Series super junction technology. The E Series Power MOSFETs offer low gate charge times on-resistance. The ultra-low on-resistance for SiHP065N60E is 30% lower compared to previous 600V E Series while delivering 44% lower gate charge, which reduces conduction and switching losses to save energy. The SiHP065N60E provides high efficiency for power applications such as telecom, enterprise and industrial. The Figure-of-Merit (FOM) is 25% lower than the closest competing MOSFET in the same class for power applications. Vishay Siliconix SiHP065N60E 600V E Series is designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100% unclamped inductive switching (UIS) testing. The SiHP065N60E MOSFETs are offered in a RoHS-compliant, halogen-free TO-220AB package.Learn More
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHP065N60E-GE3
DISTI # V36:1790_17597466		Vishay IntertechnologiesE Series Power MOSFET0
  • 1000000:$3.9610
  • 500000:$3.9650
  • 100000:$4.5390
  • 10000:$5.6900
  • 1000:$5.8910
SIHP065N60E-GE3
DISTI # SIHP065N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 40A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		868In Stock
  • 1000:$4.1178
  • 100:$5.4294
  • 25:$6.2532
  • 10:$6.5580
  • 1:$7.2600
SIHP065N60E-GE3
DISTI # SIHP065N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 40A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP065N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
    SIHP065N60E-GE3
    DISTI # SIHP065N60E-GE3    		Vishay IntertechnologiesPower MOSFET N-Channel 600V 40A 3-Pin TO-220AB (Alt: SIHP065N60E-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€3.5900
    • 500:€3.6900
    • 100:€3.7900
    • 50:€3.8900
    • 25:€4.2900
    • 10:€5.2900
    • 1:€6.6900
    SIHP065N60E-GE3
    DISTI # 15AC8633    		Vishay IntertechnologiesPOWER MOSFET, N CHANNEL, 40A, 600V,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes1039
    • 500:$4.3700
    • 250:$4.6600
    • 100:$4.8700
    • 50:$5.3900
    • 25:$5.7700
    • 10:$6.5500
    • 1:$6.8400
    SIHP065N60E-GE3
    DISTI # 78-SIHP065N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		2713
    • 1:$7.2600
    • 10:$6.5300
    • 25:$5.9500
    • 100:$5.3700
    • 250:$4.9300
    • 500:$4.5000
    • 1000:$3.9200
    • 2000:$3.7700
    SIHP065N60E-GE3
    DISTI # 1349170    		Vishay IntertechnologiesMOSFET N-CH 600V 40A TO-220AB, TU836
    • 100:£2.7240
    • 50:£2.8910
    SIHP065N60E-GE3
    DISTI # SIHP065N60E-GE3    		Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,650V,25A,250W,TO220AB23
    • 25:$6.3100
    • 10:$7.2100
    • 3:$8.5200
    • 1:$9.0200
    SIHP065N60E-GE3
    DISTI # TMOS1654    		Vishay IntertechnologiesN-CH 600V 40A 65mOhmTO220-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$4.4600
    SIHP065N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      SIHP065N60E-GE3
      DISTI # XSFT00000033014      		Vishay SiliconixMOSFET 650V VDS 250W PD +/-30V VDS E SERIES
      RoHS: Compliant      		750 in Stock0 on Order
      • 50:$7.4000
      SIHP065N60E-GE3
      DISTI # XSFT00000033015      		Vishay SiliconixMOSFET 650V VDS 250W PD +/-30V VDS E SERIES
      RoHS: Compliant      		750 in Stock0 on Order
      • 50:$7.4000
      SIHP065N60E-GE3
      DISTI # 2747697      		Vishay IntertechnologiesPOWER MOSFET, N CHANNEL, 40A, 600V1042
      • 100:£3.8900
      • 50:£4.1000
      • 10:£4.3100
      • 5:£5.2600
      • 1:£5.7700
      SIHP065N60E-GE3
      DISTI # 2747697      		Vishay IntertechnologiesPOWER MOSFET, N CHANNEL, 40A, 600V
      RoHS: Compliant      		1039
      • 500:$8.0400
      • 100:$9.6000
      • 10:$11.6700
      • 1:$12.9600
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      可用性
      庫存:
      Available
      訂購:
      1985
      輸入數量:
      SIHP065N60E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$7.26
      US$7.26
      10
      US$6.53
      US$65.30
      25
      US$5.95
      US$148.75
      100
      US$5.37
      US$537.00
      250
      US$4.93
      US$1 232.50
      500
      US$4.50
      US$2 250.00
      1000
      US$3.92
      US$3 920.00
      2000
      US$3.77
      US$7 540.00
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