IDH08G65C6XKSA1

Mfr. #:: IDH08G65C6XKSA1
製造商:: Infineon Technologies
描述:: DIODE SCHOTTKY 650V 20A TO220-2
生命週期:: 製造商新產品
數據表:: IDH08G65C6XKSA1 數據表
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更多信息:: IDH08G65C6XKSA1 更多信息

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屬性值

Tags: IDH08G6, IDH08G, IDH08, IDH0, IDH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDH08G65C6XKSA1 描述

***ronik: SiC-Diode 8A 650V 1.25V TO220-2

***i-Key: DIODE SCHOTTKY 650V 20A TO220-2

***ark: Sic Schottky Diode, 650V, 20A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2Nc; Diode Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 20A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):20A; Forward Surge Current Ifsm Max:47A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC

***nell: DIODO SCHOTTKY SIC 650V 20A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:20A; Potenza Reattiva Capacitiva Qc:12.2nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):20A; Corrente di Picco Diretta Ifsm Max:47A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V

***ineon: The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting

IDH08G65C6XKSA1 更多信息

CoolSiC™ 650V Schottky 6th Generation Diodes: Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.

Market price

型號	製造商	描述	庫存	價格
IDH08G65C6XKSA1 DISTI # V36:1790_18191483	Infineon Technologies AG	IDH08G65C6XKSA1	0	500000:$1.5730 250000:$1.5770 50000:$2.0570 5000:$2.9980 500:$3.1600
IDH08G65C6XKSA1 DISTI # IDH08G65C6XKSA1-ND	Infineon Technologies AG	DIODE SCHOTTKY 650V 20A TO220-2 RoHS: Compliant Min Qty: 1 Container: Tube	582In Stock	5000:$1.7280 2500:$1.7955 500:$2.2410 100:$2.6325 25:$3.0376 10:$3.2130 1:$3.5800
IDH08G65C6XKSA1 DISTI # IDH08G65C6XKSA1	Infineon Technologies AG	SIC DIODES - Rail/Tube (Alt: IDH08G65C6XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	3000:$1.6900 5000:$1.6900 1000:$1.7900 2000:$1.7900 500:$1.8900
IDH08G65C6XKSA1 DISTI # SP001620588	Infineon Technologies AG	SIC DIODES (Alt: SP001620588) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.3900 100:€1.5900 500:€1.5900 25:€1.6900 50:€1.6900 10:€1.7900 1:€1.9900
IDH08G65C6XKSA1 DISTI # 33AC2813	Infineon Technologies AG	SIC SCHOTTKY DIODE, 650V, 20A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:20A,Total Capacitive Charge Qc:12.2nC,Diode Case RoHS Compliant: Yes	489	500:$2.2700 250:$2.5300 100:$2.6700 50:$2.8000 25:$2.9400 10:$3.0700 1:$3.6200
IDH08G65C6XKSA1 DISTI # 726-IDH08G65C6XKSA1	Infineon Technologies AG	Schottky Diodes & Rectifiers SIC DIODES RoHS: Compliant	1025	1:$3.5800 10:$3.0400 100:$2.6400 250:$2.5000 500:$2.2500 1000:$1.8900 2500:$1.8000
IDH08G65C6XKSA1 DISTI # 2779279	Infineon Technologies AG	SIC SCHOTTKY DIODE, 650V, 20A, TO-220 RoHS: Compliant	489	1000:$2.7100 500:$2.7600 250:$2.9100 100:$3.0800 10:$3.4800 1:$3.7200
IDH08G65C6XKSA1 DISTI # 2779279	Infineon Technologies AG	SIC SCHOTTKY DIODE, 650V, 20A, TO-220	750	500:£1.7100 250:£1.9000 100:£2.0200 10:£2.3200 1:£3.0700

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