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IDH08G65C6XKSA1

IDH08G65C6XKSA1
Mfr. #:
IDH08G65C6XKSA1
製造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC DIODES
生命週期:
製造商新產品
數據表:
IDH08G65C6XKSA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IDH08G65C6XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
肖特基二極管和整流器
RoHS：
Y
產品：
肖特基碳化矽二極管
安裝方式：
通孔
包裝/案例：
TO-220-2
如果 - 正向電流：
20 A
Vrrm - 重複反向電壓：
650 V
Vf - 正向電壓：
1.25 V
Ifsm - 正向浪湧電流：
47 A
配置：
單身的
技術：
碳化矽
Ir - 反向電流：
0.8 uA
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
打包：
管子
品牌：
英飛凌科技
Pd - 功耗：
63 W
產品類別：
肖特基二極管和整流器
出廠包裝數量：
500
子類別：
二極管和整流器
第 # 部分別名：
IDH08G65C6 SP001620588
單位重量：
0.070548 oz
Tags
IDH08G6, IDH08G, IDH08, IDH0, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ronik
SiC-Diode 8A 650V 1.25V TO220-2
***i-Key
DIODE SCHOTTKY 650V 20A TO220-2
***ark
Sic Schottky Diode, 650V, 20A, To-220; Product Range:coolsic 6G 650V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2Nc; Diode Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 20A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2nC; Diode Case Style:TO-220; No. of Pins:2 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Forward Current If(AV):20A; Forward Surge Current Ifsm Max:47A; Forward Voltage VF Max:1.35V; Operating Temperature Max:175°C; Semiconductor Technology:SiC
***nell
DIODO SCHOTTKY SIC 650V 20A TO-220; Gamma Prodotti:CoolSiC 6G 650V Series; Configurazione Diodo:Singolo; Tensione Inversa Ripetitiva Vrrm Max:650V; Corrente Diretta Continua If:20A; Potenza Reattiva Capacitiva Qc:12.2nC; Modello Involucro Diodo:TO-220; Numero di Pin:2 Pin; Temperatura di Giunzione Tj Max:175°C; Standard di Qualifica Automotive:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Diretta If(AV):20A; Corrente di Picco Diretta Ifsm Max:47A; Tecnologia Semiconduttori:SiC; Temperatura di Esercizio Max:175°C; Tensione Diretta VF Max:1.35V
***ineon
The CoolSiC Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). | Summary of Features: The lowest V F: 1.25V; Best-in-class figure of merit (Q c x V F); No reverse recovery charge; Temperature independent switching behavior; High dv/dt ruggedness; Optimized thermal behavior | Benefits: Improved system efficiency over all load conditions; Increased system power density; Reduced cooling requirements and increased system reliability; Enables extremely fast switching; Easy and effective match with CoolMOS 7 families; Optimal price performance | Target Applications: Server; Telecom; PC power; Solar; Lighting
CoolSiC™ 650V Schottky 6th Generation Diodes
Infineon CoolSiC™ 650V Schottky 6th Generation Diodes feature a proprietary diffusion soldering process, a more compact design, thin-wafer technology and a novel Schottky metal system. This results in improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). CoolSiC™ Generation 6 complement the 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range.
型號 製造商 描述 庫存 價格
IDH08G65C6XKSA1
DISTI # V36:1790_18191483		Infineon Technologies AGIDH08G65C6XKSA10
  • 500000:$1.5730
  • 250000:$1.5770
  • 50000:$2.0570
  • 5000:$2.9980
  • 500:$3.1600
IDH08G65C6XKSA1
DISTI # IDH08G65C6XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 20A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube		582In Stock
  • 5000:$1.7280
  • 2500:$1.7955
  • 500:$2.2410
  • 100:$2.6325
  • 25:$3.0376
  • 10:$3.2130
  • 1:$3.5800
IDH08G65C6XKSA1
DISTI # IDH08G65C6XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDH08G65C6XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.6900
  • 5000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
  • 500:$1.8900
IDH08G65C6XKSA1
DISTI # SP001620588		Infineon Technologies AGSIC DIODES (Alt: SP001620588)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 100:€1.5900
  • 500:€1.5900
  • 25:€1.6900
  • 50:€1.6900
  • 10:€1.7900
  • 1:€1.9900
IDH08G65C6XKSA1
DISTI # 33AC2813		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 20A, TO-220,Product Range:CoolSiC 6G 650V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:650V,Continuous Forward Current If:20A,Total Capacitive Charge Qc:12.2nC,Diode Case RoHS Compliant: Yes489
  • 500:$2.2700
  • 250:$2.5300
  • 100:$2.6700
  • 50:$2.8000
  • 25:$2.9400
  • 10:$3.0700
  • 1:$3.6200
IDH08G65C6XKSA1
DISTI # 726-IDH08G65C6XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		1025
  • 1:$3.5800
  • 10:$3.0400
  • 100:$2.6400
  • 250:$2.5000
  • 500:$2.2500
  • 1000:$1.8900
  • 2500:$1.8000
IDH08G65C6XKSA1
DISTI # 2779279		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 20A, TO-220
RoHS: Compliant		489
  • 1000:$2.7100
  • 500:$2.7600
  • 250:$2.9100
  • 100:$3.0800
  • 10:$3.4800
  • 1:$3.7200
IDH08G65C6XKSA1
DISTI # 2779279		Infineon Technologies AGSIC SCHOTTKY DIODE, 650V, 20A, TO-220750
  • 500:£1.7100
  • 250:£1.9000
  • 100:£2.0200
  • 10:£2.3200
  • 1:£3.0700
圖片 型號 描述
GBJ2510-F

Mfr.#: GBJ2510-F

OMO.#: OMO-GBJ2510-F

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1N4148W-7-F

Mfr.#: 1N4148W-7-F

OMO.#: OMO-1N4148W-7-F

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IPP60R060P7XKSA1

Mfr.#: IPP60R060P7XKSA1

OMO.#: OMO-IPP60R060P7XKSA1

 MOSFET HIGH POWER_NEW
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002

 MOSFET N-CHANNEL 60V 115mA
SCS308AMC

Mfr.#: SCS308AMC

OMO.#: OMO-SCS308AMC

 Schottky Diodes & Rectifiers SIC SBD 650V 8A 33W TO-220FM
IDH20G65C5XKSA2

Mfr.#: IDH20G65C5XKSA2

OMO.#: OMO-IDH20G65C5XKSA2

 Schottky Diodes & Rectifiers SIC DIODES
STPSC10H065DY

Mfr.#: STPSC10H065DY

OMO.#: OMO-STPSC10H065DY

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
C3D10065A

Mfr.#: C3D10065A

OMO.#: OMO-C3D10065A

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 10A
IDH20G65C5XKSA2

Mfr.#: IDH20G65C5XKSA2

OMO.#: OMO-IDH20G65C5XKSA2-INFINEON-TECHNOLOGIES

 DIODE SCHOTKY 650V 20A TO220-2-1
IPP60R060P7XKSA1

Mfr.#: IPP60R060P7XKSA1

OMO.#: OMO-IPP60R060P7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 48A TO220-3
可用性
庫存:
Available
訂購:
1984
輸入數量:
IDH08G65C6XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.58
US$3.58
10
US$3.04
US$30.40
100
US$2.64
US$264.00
250
US$2.50
US$625.00
500
US$2.25
US$1 125.00
1000
US$1.89
US$1 890.00
2500
US$1.80
US$4 500.00
5000
US$1.73
US$8 650.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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