IPW65R019C7FKSA1

IPW65R019C7FKSA1
Mfr. #:
IPW65R019C7FKSA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
生命週期:
製造商新產品
數據表:
IPW65R019C7FKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPW65R019C7FKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
PG-TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
75 A
Rds On - 漏源電阻:
19 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
10 V
Qg - 門電荷:
215 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
446 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
21.1 mm
長度:
16.13 mm
系列:
CoolMOS C7
晶體管類型:
1 N-Channel
寬度:
5.21 mm
品牌:
英飛凌科技
秋季時間:
5 ns
產品類別:
MOSFET
上升時間:
27 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
106 ns
典型的開啟延遲時間:
30 ns
第 # 部分別名:
IPW65R019C7 SP000928646
單位重量:
1.340411 oz
Tags
IPW65R01, IPW65R0, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPW65R019C7 Series 650 V 75 A CoolMOS™ C7 Power Transistor - TO-247-3
***et
Transistor MOSFET N-Channel 700V 75A 3-Pin TO-247 Tube
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPW65R019C7FKSA1
DISTI # IPW65R019C7FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 75A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 240:$19.5676
  • 10:$22.5820
  • 1:$24.2600
IPW65R019C7FKSA1
DISTI # IPW65R019C7FKSA1
Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R019C7FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$14.5900
  • 480:$13.9900
  • 960:$13.4900
  • 1440:$13.0900
  • 2400:$12.7900
IPW65R019C7FKSA1
DISTI # IPW65R019C7
Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 75A 3-Pin TO-247 Tube (Alt: IPW65R019C7)
RoHS: Compliant
Min Qty: 240
Container: Tube
Asia - 0
    IPW65R019C7FKSA1
    DISTI # 52X6082
    Infineon Technologies AGMOSFET, N-CH, 650V, 75A, 150DEG C, 446W,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes0
    • 1:$22.2400
    • 10:$20.7000
    • 25:$19.8800
    • 50:$18.9500
    • 100:$18.0200
    • 250:$17.3000
    • 500:$16.5800
    IPW65R019C7FKSA1
    DISTI # 726-IPW65R019C7FKSA1
    Infineon Technologies AGMOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
    RoHS: Compliant
    0
    • 1:$19.5900
    • 5:$19.3900
    • 10:$18.0700
    • 25:$17.2600
    • 100:$15.4300
    • 250:$14.7200
    IPW65R019C7
    DISTI # 726-IPW65R019C7
    Infineon Technologies AGMOSFET N-Ch 650V 75A TO247-3 CoolMOS C7
    RoHS: Compliant
    0
    • 1:$19.5900
    • 5:$19.3900
    • 10:$18.0700
    • 25:$17.2600
    • 100:$15.4300
    IPW65R019C7FKSA1
    DISTI # 8977624
    Infineon Technologies AGMOSFET N-CHANNEL 700V 75A COOLMOS TO247, EA1
    • 1:£21.6000
    • 6:£19.8700
    • 15:£18.2800
    IPW65R019C7FKSA1Infineon Technologies AGINSTOCK130
      IPW65R019C7FKSA1
      DISTI # 2420490
      Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-3
      RoHS: Compliant
      0
      • 1:£15.1500
      • 5:£14.9600
      • 10:£13.3200
      • 50:£12.6200
      • 100:£11.9100
      IPW65R019C7FKSA1
      DISTI # 2420490
      Infineon Technologies AGMOSFET, N-CH, 650V, 75A, TO-247-3
      RoHS: Compliant
      0
      • 1:$31.0000
      • 5:$30.6900
      • 10:$28.6000
      • 25:$27.3200
      • 100:$24.4200
      圖片 型號 描述
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      可用性
      庫存:
      966
      訂購:
      2949
      輸入數量:
      IPW65R019C7FKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$19.58
      US$19.58
      5
      US$19.38
      US$96.90
      10
      US$18.06
      US$180.60
      25
      US$17.25
      US$431.25
      100
      US$15.42
      US$1 542.00
      250
      US$14.71
      US$3 677.50
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