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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SIHD12N50E-GE3 DISTI # V36:1790_09218423 | Vishay Intertechnologies | N-CHANNEL 500V | 0 |
|
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3-ND | Vishay Siliconix | MOSFET N-CHAN 500V DPAK Min Qty: 1 Container: Tube | 5455In Stock |
|
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK (Alt: SIHD12N50E-GE3) Min Qty: 3000 | Europe - 0 | |
| SIHD12N50E-GE3 DISTI # SIHD12N50E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 10.5A 3-Pin DPAK - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIHD12N50E-GE3 DISTI # 43Y2396 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.33ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes RoHS: Compliant | 3868 |
|
| SIHD12N50E-GE3 DISTI # 78-SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 3276 |
|
| SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - | |
| SIHD12N50EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 3000 | |
| SIHD12N50E | ISC | DPAK/TO-252 | 5000 | |
| SIHD12N50E-GE3 DISTI # 2471940RL | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 0 |
|
| SIHD12N50E-GE3 DISTI # 2471940 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 3868 |
|
| SIHD12N50E-GE3 DISTI # 2471940 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 3921 |
|
| SIHD12N50E-GE3 DISTI # 2471940RL | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3 RoHS: Compliant | 0 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SIHD1K4N60E-GE3 OMO.#: OMO-SIHD1K4N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
|
Mfr.#: SIHD14N60E-GE3 OMO.#: OMO-SIHD14N60E-GE3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD12N50E-GE3 OMO.#: OMO-SIHD12N50E-GE3 |
MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD180N60E-GE3 OMO.#: OMO-SIHD180N60E-GE3 |
MOSFET 650V Vds; 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD186N60EF-GE3 OMO.#: OMO-SIHD186N60EF-GE3 |
MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology |
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Mfr.#: SIHD12N50E OMO.#: OMO-SIHD12N50E-1190 |
全新原裝 |
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Mfr.#: SIHD12N50EGE3 OMO.#: OMO-SIHD12N50EGE3-1190 |
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
Mfr.#: SIHD14N60E-GE3 OMO.#: OMO-SIHD14N60E-GE3-VISHAY |
MOSFET N-CHANNEL 600V 13A DPAK |
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Mfr.#: SIHD180N60E-GE3 OMO.#: OMO-SIHD180N60E-GE3-VISHAY |
E Series Power MOSFET DPAK (TO-252), 195 m @ 10V |
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Mfr.#: SIHD1K4N60E-GE3 OMO.#: OMO-SIHD1K4N60E-GE3-VISHAY |
E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V |