A2G22S190-01SR3

A2G22S190-01SR3
Mfr. #:
A2G22S190-01SR3
製造商:
NXP Semiconductors
描述:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
生命週期:
製造商新產品
數據表:
A2G22S190-01SR3 數據表
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ECAD Model:
更多信息:
A2G22S190-01SR3 更多信息 A2G22S190-01SR3 Product Details
產品屬性
屬性值
製造商:
恩智浦
產品分類:
射頻 MOSFET 晶體管
RoHS:
Y
晶體管極性:
N通道
技術:
氮化鎵矽
Id - 連續漏極電流:
19 mA
Vds - 漏源擊穿電壓:
150 V
獲得:
16.5 dB
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
安裝方式:
貼片/貼片
包裝/案例:
NI-400S-2
打包:
捲軸
工作頻率:
1800 MHz to 2200 MHz
系列:
A2G22S190
類型:
射頻功率MOSFET
品牌:
恩智浦半導體
通道數:
1 Channel
產品類別:
射頻 MOSFET 晶體管
出廠包裝數量:
250
子類別:
MOSFET
Vgs - 柵源電壓:
- 8 V
Vgs th - 柵源閾值電壓:
- 2.3 V
第 # 部分別名:
935372783118
Tags
A2G22S1, A2G22, A2G2, A2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
圖片 型號 描述
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3

RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

IC TRANS RF LDMOS
A2G22S160

Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

全新原裝
A2G22S160--01SR3

Mfr.#: A2G22S160--01SR3

OMO.#: OMO-A2G22S160--01SR3-1190

全新原裝
A2G22S160-01S

Mfr.#: A2G22S160-01S

OMO.#: OMO-A2G22S160-01S-1190

全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
A2G22S190-01SR3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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