A2G22S160-01SR3

Mfr. #:: A2G22S160-01SR3
製造商:: NXP / Freescale
描述:: RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
生命週期:: 製造商新產品
數據表:: A2G22S160-01SR3 數據表
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更多信息:: A2G22S160-01SR3 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

技術：: 矽

打包：: 捲軸

品牌：: 恩智浦/飛思卡爾

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 250

子類別：: 晶體管

第 # 部分別名：: 935312929118

單位重量：: 0.089430 oz

Tags: A2G22S160-0, A2G22S16, A2G22S1, A2G22, A2G2, A2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2G22S160-01SR3 描述

*** Electronic Components: RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V

***W: RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828

***el Electronic: IC DAC 16BIT V-OUT 16TSSOP

***et: GAN 2.2GHZ 160W NI400S-2

***hardson RFPD: RF POWER TRANSISTOR

***i-Key: IC TRANS RF LDMOS

A2G22S160-01SR3 更多信息

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

型號	製造商	描述	庫存	價格
A2G22S160-01SR3 DISTI # A2G22S160-01SR3-ND	NXP Semiconductors	IC TRANS RF LDMOS RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$115.1477
A2G22S160-01SR3 DISTI # A2G22S160-01SR3	Avnet, Inc.	GAN 2.2GHZ 160W NI400S-2 - Tape and Reel (Alt: A2G22S160-01SR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$126.1900 500:$121.1900 1000:$116.4900 1500:$112.1900 2500:$110.0900
A2G22S160-01SR3 DISTI # A2G22S160-01SR3	Avnet, Inc.	GAN 2.2GHZ 160W NI400S-2 (Alt: A2G22S160-01SR3) RoHS: Compliant Min Qty: 250	Europe - 0	250:€128.7900 500:€123.6900 1000:€118.8900 1500:€110.3900 2500:€103.0900
A2G22S160-01SR3 DISTI # 51Y5359	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR, 1800-2200 MHZ, 32 W AVG., 48 V REEL 13" Q1 NDP	0	100:$108.2300 50:$115.1500 25:$116.8800 10:$118.6100 5:$122.0800 1:$125.5400
A2G22S160-01SR3 DISTI # 841-A2G22S160-01SR3	NXP Semiconductors	RF JFET Transistors A2G22S160-01S/CFM2F///REEL 13 Q1 NDP RoHS: Compliant	0	250:$112.5600
A2G22S160-01SR3 DISTI # A2G22S160-01SR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$129.8700

相關產品

圖片	型號	描述
	Mfr.#: A2G22S160-01SR3 OMO.#: OMO-A2G22S160-01SR3	RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
	Mfr.#: A2G22S190-01SR3 OMO.#: OMO-A2G22S190-01SR3	RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
	Mfr.#: A2G22S160-01SR3 OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS	IC TRANS RF LDMOS
	Mfr.#: A2G22S160 OMO.#: OMO-A2G22S160-1190	全新原裝
	Mfr.#: A2G22S160--01SR3 OMO.#: OMO-A2G22S160--01SR3-1190	全新原裝
	Mfr.#: A2G22S160-01S OMO.#: OMO-A2G22S160-01S-1190	全新原裝