IPP65R190C7FKSA1

IPP65R190C7FKSA1
Mfr. #:
IPP65R190C7FKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPP65R190C7FKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPP65R190C7FKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
13 A
Rds On - 漏源電阻:
168 mOhms
Vgs th - 柵源閾值電壓:
3 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
23 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
72 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
15.65 mm
長度:
10 mm
系列:
CoolMOS C7
晶體管類型:
1 N-Channel
寬度:
4.4 mm
品牌:
英飛凌科技
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
11 ns
出廠包裝數量:
500
子類別:
MOSFET
典型關斷延遲時間:
54 ns
典型的開啟延遲時間:
11 ns
第 # 部分別名:
IPP65R190C7 SP000929426
單位重量:
0.211644 oz
Tags
IPP65R190C, IPP65R19, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 4, N-Channel MOSFET, 13 A, 700 V, 3-Pin TO-220 Infineon IPP65R190C7FKSA1
***ical
Trans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***ark
MOSFET, N-CH, 650V, 13A, TO-220-3
***i-Key
MOSFET N-CH 650V 13A TO220
***an P&S
700V,190A,N-channel power MOSFET
***ukat
N-Ch 650V 13A 72W 0,19R TO220
***ronik
N-CH 650V 13A 190mOhm TO220
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 13A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:72W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 13A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.168ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:72W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPP65R190C7FKSA1
DISTI # V99:2348_06377129
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube500
  • 2500:$1.3550
  • 1000:$1.3620
  • 500:$1.6640
  • 100:$1.9140
  • 10:$2.4110
  • 1:$3.1537
IPP65R190C7FKSA1
DISTI # V36:1790_06377129
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube0
  • 500000:$1.1460
  • 250000:$1.1480
  • 50000:$1.3610
  • 5000:$1.7290
  • 500:$1.7900
IPP65R190C7FKSA1
DISTI # IPP65R190C7FKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 13A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 5000:$1.3426
  • 2500:$1.3942
  • 500:$1.8074
  • 100:$2.1998
  • 50:$2.5820
  • 10:$2.7370
  • 1:$3.0500
IPP65R190C7FKSA1
DISTI # 32914739
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube500
  • 5:$3.1537
IPP65R190C7FKSA1
DISTI # IPP65R190C7FKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R190C7FKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 3000:$1.1900
  • 5000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
  • 500:$1.3900
IPP65R190C7FKSA1
DISTI # SP000929426
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube (Alt: SP000929426)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.4145
  • 500:€1.6560
  • 250:€1.8285
  • 100:€1.9895
  • 25:€2.4265
  • 1:€2.7600
IPP65R190C7FKSA1
DISTI # IPP65R190C7
Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R190C7)
Min Qty: 278
Container: Bulk
Americas - 0
  • 1390:$1.1900
  • 2780:$1.1900
  • 556:$1.2900
  • 834:$1.2900
  • 278:$1.3900
IPP65R190C7FKSA1
DISTI # 54X5232
Infineon Technologies AGMOSFET Transistor, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V RoHS Compliant: Yes0
  • 5000:$1.2800
  • 2500:$1.3300
  • 1000:$1.4300
  • 500:$1.7400
  • 100:$1.9800
  • 10:$2.4700
  • 1:$2.9200
IPP65R190C7FKSA1
DISTI # 726-IPP65R190C7FKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
IPP65R190C7
DISTI # 726-IPP65R190C7
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
IPP65R190C7FKSA1
DISTI # 8977591P
Infineon Technologies AGMOSFET N-CHANNEL 650V 13A COOLMOS, TU258
  • 20:£1.0280
IPP65R190C7FKSA1
DISTI # IPP65R190C7
Infineon Technologies AGN-Ch 650V 13A 72W 0,19R TO220
RoHS: Compliant
460
  • 1:€5.3300
  • 10:€2.3300
  • 50:€1.3300
  • 100:€1.2200
IPP65R190C7FKSA1
DISTI # 2420494
Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-220-30
  • 500:£1.3200
  • 250:£1.4100
  • 100:£1.5000
  • 10:£1.8900
  • 1:£2.5000
IPP65R190C7FKSA1
DISTI # 2420494
Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-220-3
RoHS: Compliant
0
  • 1000:$2.1400
  • 500:$2.5900
  • 100:$2.9500
  • 10:$3.6900
  • 1:$4.3600
圖片 型號 描述
IPP65R190CFD

Mfr.#: IPP65R190CFD

OMO.#: OMO-IPP65R190CFD

MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
IPP65R190CFDAAKSA1

Mfr.#: IPP65R190CFDAAKSA1

OMO.#: OMO-IPP65R190CFDAAKSA1

MOSFET N-Ch 650V 17.5A TO220-3
IPP65R190C7

Mfr.#: IPP65R190C7

OMO.#: OMO-IPP65R190C7

MOSFET HIGH POWER_NEW
IPP65R190C6

Mfr.#: IPP65R190C6

OMO.#: OMO-IPP65R190C6

MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C7FKSA1

Mfr.#: IPP65R190C7FKSA1

OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 13A TO220
IPP65R190CFD 65F6190

Mfr.#: IPP65R190CFD 65F6190

OMO.#: OMO-IPP65R190CFD-65F6190-1190

全新原裝
IPP65R190CFD,65R190C

Mfr.#: IPP65R190CFD,65R190C

OMO.#: OMO-IPP65R190CFD-65R190C-1190

全新原裝
IPP65R190CFDA

Mfr.#: IPP65R190CFDA

OMO.#: OMO-IPP65R190CFDA-1190

全新原裝
IPP65R190E6

Mfr.#: IPP65R190E6

OMO.#: OMO-IPP65R190E6-1190

MOSFET N-Ch 700V 20.2A TO220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 20.2A TO220
可用性
庫存:
Available
訂購:
1984
輸入數量:
IPP65R190C7FKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.89
US$2.89
10
US$2.45
US$24.50
100
US$1.96
US$196.00
500
US$1.72
US$860.00
1000
US$1.42
US$1 420.00
2500
US$1.32
US$3 300.00
5000
US$1.27
US$6 350.00
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