FGA30S120P

Mfr. #:: FGA30S120P
製造商:: ON Semiconductor
描述:: IGBT Transistors Shorted AnodeTM IGBT
生命週期:: 製造商新產品
數據表:: FGA30S120P 數據表
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ECAD Model:
更多信息:: FGA30S120P 更多信息

產品屬性
屬性值

製造商: 仙童半導體

產品分類: IGBT - 單

系列: -

打包: 管子

單位重量: 0.225789 oz

安裝方式: 通孔

包裝盒: TO-3P-3, SC-65-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-3P

配置: 單身的

最大功率: 348W

反向恢復時間trr: -

電流收集器 Ic-Max: 60A

電壓收集器發射極擊穿最大值: 1300V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 150A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 30A

開關能源: -

柵極電荷: 78nC

Td-on-off-25°C: -

測試條件: -

鈀功耗: 174 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 1300 V

集電極-發射極-飽和-電壓: 2.3 V

25-C 時的連續集電極電流: 60 A

柵極-發射極-漏電流: 500 nA

最大柵極發射極電壓: 25 V

連續集電極電流 Ic-Max: 60 A

Tags: FGA30, FGA3, FGA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA30S120P 更多信息

Shorted Anode™ Trench IGBTs: ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More

Market price

型號	製造商	描述	庫存	價格
FGA30S120P DISTI # V99:2348_06359130	ON Semiconductor	Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail	892	5000:$2.1960 2500:$2.2720 1000:$2.3730 500:$2.7460 250:$2.9990 100:$3.1410 10:$3.5010 1:$4.0250
FGA30S120P DISTI # FGA30S120P-ND	ON Semiconductor	IGBT 1300V 60A 348W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$2.5725 900:$3.0503 450:$3.3994 10:$4.3730 1:$4.8700
FGA30S120P DISTI # 26398855	ON Semiconductor	Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail	892	500:$2.7420 250:$2.9939 100:$3.1360 10:$3.4940 3:$4.0170
FGA30S120P DISTI # FGA30S120P	ON Semiconductor	Trans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$2.1900 900:$2.1900 1800:$2.1900 2700:$2.1900 4500:$2.0900
FGA30S120P DISTI # 95T0023	ON Semiconductor	SA2TIGBT TO3PN 30A 1200V / TUBE	0	1:$5.0800 10:$4.1200 100:$3.4200 500:$3.0900 1000:$2.6300 2500:$2.5100 10000:$2.3700
FGA30S120P DISTI # 512-FGA30S120P	ON Semiconductor	IGBT Transistors Shorted AnodeTM IGBT RoHS: Compliant	375	1:$4.6300 10:$3.9300 100:$3.4100 250:$3.2300 500:$2.9000
FGA30S120P	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel RoHS: Compliant	2700	1000:$2.5500 500:$2.6900 100:$2.8000 25:$2.9200 1:$3.1400
FGA30S120P DISTI # 8648789P	ON Semiconductor	IGBT 1200V 30A SHORTED-ANODE TO3PN, TU	204	10:£3.5950 40:£3.1450 100:£2.9400 200:£2.8050
FGA30S120P DISTI # 8648789	ON Semiconductor	IGBT 1200V 30A SHORTED-ANODE TO3PN, PK	30	2:£4.0800 10:£3.5950 40:£3.1450 100:£2.9400 200:£2.8050
FGA30S120P DISTI # C1S226600774282	ON Semiconductor	Trans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail RoHS: Compliant	892	500:$2.7420 250:$2.9939 100:$3.1360 10:$3.4940 1:$4.0170

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