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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPB097N08N3 G DISTI # IPB097N08N3GTR-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB097N08N3 G DISTI # IPB097N08N3GCT-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB097N08N3 G DISTI # IPB097N08N3GDKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 70A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB097N08N3G DISTI # IPB097N08N3G | Infineon Technologies AG | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G) RoHS: Not Compliant Min Qty: 676 Container: Bulk | Americas - 0 |
|
| IPB097N08N3GATMA1 DISTI # IPB097N08N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1) RoHS: Compliant Min Qty: 582 Container: Bulk | Americas - 0 |
|
| IPB097N08N3 G DISTI # 726-IPB097N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPB097N08N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 15767 |
|
| IPB097N08N3G | Infineon Technologies AG | Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 71 |
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| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: IPB090N06N3 G OMO.#: OMO-IPB090N06N3-G |
MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB090N06N3GATMA1 |
MOSFET N-CH 60V 50A TO263-3 |
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Mfr.#: IPB090N06N3GS OMO.#: OMO-IPB090N06N3GS-1190 |
全新原裝 |
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Mfr.#: IPB093N04L G OMO.#: OMO-IPB093N04L-G-1190 |
全新原裝 |
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Mfr.#: IPB093N04LG OMO.#: OMO-IPB093N04LG-1190 |
Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB096N03LGATMA1 |
MOSFET N-CH 30V 35A TO-263-3 |
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Mfr.#: IPB097N08N3GS OMO.#: OMO-IPB097N08N3GS-1190 |
全新原裝 |
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Mfr.#: IPB09N03LA |
MOSFET N-CH 25V 50A D2PAK |
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Mfr.#: IPB097N08N3 G |
IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 |
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Mfr.#: IPB096N03L G OMO.#: OMO-IPB096N03L-G-126 |
IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 |