FQP7N80C

FQP7N80C
Mfr. #:
FQP7N80C
製造商:
ON Semiconductor
描述:
Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series
生命週期:
製造商新產品
數據表:
FQP7N80C 數據表
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ECAD Model:
產品屬性
屬性值
製造商
仙童
產品分類
FET - 單
打包
管子
部分別名
FQP7N80C_NL
單位重量
0.063493 oz
安裝方式
通孔
包裝盒
TO-220-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
167 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
60 ns
上升時間
100 ns
VGS-柵極-源極-電壓
30 V
Id 連續漏極電流
6.6 A
Vds-漏-源-擊穿電壓
800 V
Rds-On-Drain-Source-Resistance
1.9 Ohms
晶體管極性
N通道
典型關斷延遲時間
50 ns
典型開啟延遲時間
35 ns
正向跨導最小值
5.5 S
通道模式
增強
Tags
FQP7N80C, FQP7N8, FQP7N, FQP7, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C
***Semiconductor
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220
***p One Stop Japan
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3
***i-Key
MOSFET N-CH 800V 6.6A TO-220
***ark
Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes
***ser
MOSFETs 800V N-Ch Q-FET advance C-Series
***inecomponents.com
800V N-Channel Advance QFET® C-Series
***eco
3 LEAD PLASTIC W/EXPOSED HEATSNK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
型號 製造商 描述 庫存 價格
FQP7N80C
DISTI # V36:1790_06359748
ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 5000:$0.7437
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 1:$1.7748
FQP7N80C
DISTI # FQP7N80C-ND
ON SemiconductorMOSFET N-CH 800V 6.6A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
389In Stock
  • 1000:$1.2106
  • 500:$1.4611
  • 100:$1.8785
  • 10:$2.3380
  • 1:$2.5900
FQP7N80C
DISTI # 30333733
ON SemiconductorQFC 800V 1.9OHM TO2208600
  • 2000:$0.7846
  • 1000:$0.8719
  • 500:$1.0713
  • 100:$1.2929
  • 10:$1.5492
  • 8:$1.7748
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 525
  • 1000:$0.9039
  • 2000:$0.8799
  • 4000:$0.8569
  • 6000:$0.8349
  • 10000:$0.8139
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1
Europe - 500
  • 1:€1.4339
  • 10:€1.1729
  • 25:€1.0029
  • 50:€0.9099
  • 100:€0.8959
  • 500:€0.8819
  • 1000:€0.8689
FQP7N80C
DISTI # FQP7N80C
ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C)
RoHS: Compliant
Min Qty: 1000
Asia - 5000
  • 1000:$0.9900
  • 2000:$0.9519
  • 3000:$0.9167
  • 5000:$0.8839
  • 10000:$0.8535
  • 25000:$0.8250
  • 50000:$0.8115
FQP7N80C
DISTI # 97K0195
ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes354
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C.
DISTI # 29AC6380
Fairchild Semiconductor CorporationQFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES525
  • 1:$2.3700
  • 10:$2.0200
  • 100:$1.6400
  • 500:$1.4400
  • 1000:$1.2000
  • 2500:$1.1200
  • 5000:$1.0900
FQP7N80C
DISTI # 512-FQP7N80C
ON SemiconductorMOSFET 800V N-Ch Q-FET advance C-Series
RoHS: Compliant
260
  • 1:$2.2300
  • 10:$1.8900
  • 100:$1.5100
  • 500:$1.3200
  • 1000:$1.1000
FQP7N80CFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
11110
  • 1000:$1.1700
  • 500:$1.2300
  • 100:$1.2800
  • 25:$1.3400
  • 1:$1.4400
FQP7N80CFairchild Semiconductor Corporation 100
    FQP7N80C
    DISTI # 6715180P
    ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, TU1269
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80C
    DISTI # 6715180
    ON SemiconductorMOSFET N-CHANNEL 800V 6.6A TO220AB, PK75
    • 5:£1.4860
    • 50:£1.4260
    • 100:£1.3700
    FQP7N80CFairchild Semiconductor Corporation6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB49
      FQP7N80C
      DISTI # 1095073
      ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant
      354
      • 1:$3.5300
      • 10:$3.0000
      • 100:$2.4000
      • 500:$2.0900
      • 1000:$1.7500
      • 2000:$1.6200
      • 5000:$1.5700
      • 10000:$1.5100
      FQP7N80C
      DISTI # C1S541901511605
      ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant
      8600
      • 1000:$0.8717
      • 500:$1.0330
      • 100:$1.2926
      • 10:$1.5603
      FQP7N80C
      DISTI # 1095073
      ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant
      358
      • 1:£1.5900
      • 10:£1.2200
      • 100:£0.9440
      • 250:£0.8850
      • 500:£0.8250
      圖片 型號 描述
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      FQP7N90C

      Mfr.#: FQP7N90C

      OMO.#: OMO-FQP7N90C-1190

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      FQP7N80C

      Mfr.#: FQP7N80C

      OMO.#: OMO-FQP7N80C-ON-SEMICONDUCTOR

      Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series
      可用性
      庫存:
      Available
      訂購:
      5500
      輸入數量:
      FQP7N80C的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$1.05
      US$1.05
      10
      US$0.99
      US$9.94
      100
      US$0.94
      US$94.22
      500
      US$0.89
      US$444.90
      1000
      US$0.84
      US$837.50
      從...開始
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