| PartNumber | FQP7N20 | FQP7N10 | FQP7N10L |
| Description | MOSFET 200V N-Channel QFET | MOSFET 100V N-Channel QFET | MOSFET 100V N-Ch QFET Logic Level |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 100 V | 100 V |
| Id Continuous Drain Current | 6.6 A | 7.3 A | 7.3 A |
| Rds On Drain Source Resistance | 690 mOhms | 350 mOhms | 275 mOhms |
| Vgs Gate Source Voltage | 30 V | 25 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 63 W | 40 W | 40 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 16.3 mm | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQP7N20 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 4 S | 3.6 S | 5 S |
| Fall Time | 35 ns | 19 ns | 50 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 65 ns | 24 ns | 100 ns |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 13 ns | 17 ns |
| Typical Turn On Delay Time | 8 ns | 7 ns | 9 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.090478 oz |
| Part # Aliases | - | - | FQP7N10L_NL |