BSM300D12P2E001

Mfr. #:: BSM300D12P2E001
製造商:: Rohm Semiconductor
描述:: Discrete Semiconductor Modules 300A SiC Power Module
生命週期:: 製造商新產品
數據表:: BSM300D12P2E001 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: BSM300D12P2E001 更多信息

產品屬性
屬性值

製造商：: 羅姆半導體

產品分類：: 分立半導體模塊

RoHS：: Y

產品：: 功率 MOSFET 模塊

類型：: 碳化矽功率MOSFET

Vgs - 柵源電壓：: - 6 V, 22 V

安裝方式：: 螺絲安裝

包裝/案例：: 模塊

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

系列：: BSMx

打包：: 大部分

配置：: 半橋

高度：: 17 mm

長度：: 122 mm

寬度：: 62 mm

品牌：: 羅姆半導體

通道數：: 1 Channel

晶體管極性：: N通道

典型延遲時間：: 80 ns

秋季時間：: 65 ns

Id - 連續漏極電流：: 300 A

Pd - 功耗：: 1875 W

產品類別：: 分立半導體模塊

上升時間：: 70 ns

出廠包裝數量：: 4

子類別：: 分立半導體模塊

典型關斷延遲時間：: 250 ns

典型的開啟延遲時間：: 80 ns

Vds - 漏源擊穿電壓：: 1200 V

Vgs th - 柵源閾值電壓：: 1.6 V

第 # 部分別名：: BSM300D12P2E001

Tags: BSM300, BSM30, BSM3, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM300D12P2E001 描述

***Components: Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001

***p One Stop Japan: Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray

***et Europe: Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray

***ical: Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray

***ukat: SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-

***i-Key: MOSFET 2N-CH 1200V 300A

***ronik: SICDMOS 1200V 300A 1.6V Modul

***: 300A SIC POWER MODULE

BSM300D12P2E001 更多信息

Silicon Carbide (SiC) Power Devices: ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SiC Power Modules: ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.

BSM300D12P2E001 SiC Power Module: ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.

Market price

型號	製造商	描述	庫存	價格
BSM300D12P2E001 DISTI # BSM300D12P2E001-ND	ROHM Semiconductor	MOSFET 2N-CH 1200V 300A RoHS: Compliant Min Qty: 1 Container: Tray	6In Stock	1:$663.0800
BSM300D12P2E001 DISTI # BSM300D12P2E001	ROHM Semiconductor	Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001) RoHS: Compliant Min Qty: 1 Container: Case	Europe - 0	1:€638.5900
BSM300D12P2E001 DISTI # BSM300D12P2E001	ROHM Semiconductor	Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001) RoHS: Compliant Min Qty: 4 Container: Bulk	Americas - 0
BSM300D12P2E001 DISTI # 755-BSM300D12P2E001	ROHM Semiconductor	Discrete Semiconductor Modules 300A SiC Power Module RoHS: Compliant	46	1:$639.4400 5:$600.9100
BSM300D12P2E001	ROHM Semiconductor		3	4:$885.8400 2:$941.2050 1:$968.8875
BSM300D12P2E001 DISTI # BSM300D12P2E001	ROHM Semiconductor	SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E- RoHS: Compliant	4	1:€895.4000 4:€835.4000 8:€805.4000 12:€777.3800
BSM300D12P2E001 DISTI # TMOSP11415	ROHM Semiconductor	SICDMOS 1200V 300A 1.6V Modul RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	4:$767.9200
BSM300D12P2E001-EDEM3 DISTI # AS0000000000108	AgileSwitch	RoHS: Compliant	2 in Stock0 on Order	100:$174.2300 50:$182.9400 10:$191.6500 1:$200.3600
BSM300D12P2E001	ROHM Semiconductor	Discrete Semiconductor Modules 300A SiC Power Module RoHS: Compliant	Americas - 6
BSM300D12P2E001	ROHM Semiconductor	RoHS(ship within 1day)	4	1:$610.7700 10:$588.8000 50:$571.2300 100:$562.4400 500:$558.0400 1000:$553.6500

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