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SI2306BDS-T1-E3

SI2306BDS-T1-E3
Mfr. #:
SI2306BDS-T1-E3
製造商:
Vishay
描述:
MOSFET N-CH 30V 3.16A SOT23-3
生命週期:
製造商新產品
數據表:
SI2306BDS-T1-E3 數據表
交貨:
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ECAD Model:
更多信息:
SI2306BDS-T1-E3 更多信息
產品屬性
屬性值
製造商
威世
產品分類
FET - 單
打包
捲軸
部分別名
SI2306BDS-E3
單位重量
0.050717 oz
安裝方式
貼片/貼片
商品名
溝槽場效應晶體管
包裝盒
SOT-23-3
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
750 mW
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
12 ns
上升時間
12 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
3.16 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
47 mOhms
晶體管極性
N通道
典型關斷延遲時間
14 ns
典型開啟延遲時間
7 ns
通道模式
增強
Tags
SI2306BDS-T1-E, SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.047 Ohms Surface Mount Power Mosfet - SOT-23
***ied Electronics & Automation
MOSFET; N-Ch.; 30 V(D-S); 0.047 Ohm @ 10 V(GS); 4 A; TO-236 (SOT-23)
*** electronic
Transistor MOSFET N-Ch. 4A/30V SOT23
***ical
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:3.16A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ark
N Channel Mosfet, 30V, 3.16A To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.16A; On Resistance Rds(On):0.038Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
型號 製造商 描述 庫存 價格
SI2306BDS-T1-E3
DISTI # V72:2272_07432780		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3326
  • 3000:$0.2138
  • 1000:$0.2185
  • 500:$0.2831
  • 250:$0.3412
  • 100:$0.3439
  • 25:$0.4172
  • 10:$0.4636
  • 1:$0.6080
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11939In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11939In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 3000:$0.2302
SI2306BDS-T1-E3
DISTI # 27544423		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3326
  • 3000:$0.2138
  • 1000:$0.2185
  • 500:$0.2831
  • 250:$0.3412
  • 100:$0.3439
  • 59:$0.4172
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1299
  • 6000:$0.1259
  • 12000:$0.1209
  • 18000:$0.1179
  • 30000:$0.1149
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3429
  • 6000:€0.2339
  • 12000:€0.2009
  • 18000:€0.1859
  • 30000:€0.1729
SI2306BDS-T1-E3
DISTI # SI2306BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2306BDS-T1-E3
    DISTI # 65K1920    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 65K1920)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.7680
    • 25:$0.5860
    • 50:$0.5100
    • 100:$0.4340
    • 250:$0.3960
    • 500:$0.3580
    • 1000:$0.2760
    SI2306BDS-T1-E3
    DISTI # 51K6949    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 3.16A TO-236, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
    • 1:$0.2250
    • 3000:$0.2250
    SI2306BDS-T1-E3
    DISTI # 65K1920    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 3.16A TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- , RoHS Compliant: Yes7218
    • 1:$0.7680
    • 25:$0.5860
    • 50:$0.5100
    • 100:$0.4340
    • 250:$0.3960
    • 500:$0.3580
    • 1000:$0.2760
    SI2306BDS-T1-E3.
    DISTI # 26AC3315    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.2250
    • 3000:$0.2250
    SI2306BDS-T1-E3
    DISTI # 70026144    		Vishay SiliconixMOSFET,N-Ch.,30 V(D-S),0.047 Ohm @ 10 V(GS),4 A,TO-236 (SOT-23)
    RoHS: Compliant    		0
    • 3000:$0.1950
    SI2306BDS-T1-E3
    DISTI # 781-SI2306BDS-E3    		Vishay IntertechnologiesMOSFET 30V 4.0A 0.75W
    RoHS: Compliant    		3765
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2250
    SI2306BDS-T1-E3Vishay Semiconductors3160 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-2362108
    • 279:$0.1200
    • 34:$0.1800
    • 1:$0.6000
    SI2306BDS-T1-E3Vishay Intertechnologies 2762
      SI2306BDS-T1-E3Vishay Siliconix 2635
      • 12:$0.4500
      • 35:$0.2250
      • 224:$0.1350
      • 1113:$0.0900
      SI2306BDST1E3Vishay Intertechnologies 1063
        SI2306BDS-T1-E3
        DISTI # C1S806000589044        		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R
        RoHS: Compliant        		3326
        • 250:$0.3095
        • 100:$0.3439
        • 25:$0.4172
        • 10:$0.4636
        SI2306BDS-T1-E3Vishay IntertechnologiesMOSFET 30V 4.0A 0.75W
        RoHS: Compliant        		Americas - 108000
          SI2306BDS-T1-E3
          DISTI # 1470157          		Vishay IntertechnologiesMOSFET, N, SOT-23
          RoHS: Compliant          		13119
          • 5:£0.4260
          • 25:£0.3980
          • 100:£0.2790
          SI2306BDS-T1-E3
          DISTI # XSFP00000114025          		Vishay Siliconix 
          RoHS: Compliant          		16152
          • 3000:$0.4200
          • 16152:$0.3818
          SI2306BDS-T1-E3
          DISTI # 1470157RL          		Vishay IntertechnologiesMOSFET, N, SOT-23
          RoHS: Compliant          		0
          • 20:$0.9440
          • 100:$0.7810
          • 500:$0.6120
          • 1000:$0.5030
          • 2500:$0.4270
          • 5000:$0.4040
          SI2306BDS-T1-E3
          DISTI # 1470157          		Vishay IntertechnologiesMOSFET, N, SOT-23
          RoHS: Compliant          		13119
          • 20:$0.9440
          • 100:$0.7810
          • 500:$0.6120
          • 1000:$0.5030
          • 2500:$0.4270
          • 5000:$0.4040
          圖片 型號 描述
          SI2306BDS-T1-E3

          Mfr.#: SI2306BDS-T1-E3

          OMO.#: OMO-SI2306BDS-T1-E3

          		 MOSFET 30V 4.0A 0.75W
          SI2306BDS-T1-GE3

          Mfr.#: SI2306BDS-T1-GE3

          OMO.#: OMO-SI2306BDS-T1-GE3

          		 MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
          SI2306BDS

          Mfr.#: SI2306BDS

          OMO.#: OMO-SI2306BDS-1190

          		 全新原裝
          SI2306BDS-T-E3

          Mfr.#: SI2306BDS-T-E3

          OMO.#: OMO-SI2306BDS-T-E3-1190

          		 全新原裝
          SI2306BDS-T1

          Mfr.#: SI2306BDS-T1

          OMO.#: OMO-SI2306BDS-T1-1190

          		 全新原裝
          SI2306BDS-T1-E3

          Mfr.#: SI2306BDS-T1-E3

          OMO.#: OMO-SI2306BDS-T1-E3-VISHAY

          		 MOSFET N-CH 30V 3.16A SOT23-3
          SI2306BDS-T1-E3 L6Y

          Mfr.#: SI2306BDS-T1-E3 L6Y

          OMO.#: OMO-SI2306BDS-T1-E3-L6Y-1190

          		 全新原裝
          SI2306BDS-T1-E3 , MA8091

          Mfr.#: SI2306BDS-T1-E3 , MA8091

          OMO.#: OMO-SI2306BDS-T1-E3-MA8091-1190

          		 全新原裝
          SI2306BDS-T1-GE3

          Mfr.#: SI2306BDS-T1-GE3

          OMO.#: OMO-SI2306BDS-T1-GE3-VISHAY

          		 MOSFET N-CH 30V 3.16A SOT23-3
          SI2306BDS-T1-E3-CUT TAPE

          Mfr.#: SI2306BDS-T1-E3-CUT TAPE

          OMO.#: OMO-SI2306BDS-T1-E3-CUT-TAPE-1190

          		 全新原裝
          可用性
          庫存:
          Available
          訂購:
          3000
          輸入數量:
          SI2306BDS-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$0.14
          US$0.14
          10
          US$0.13
          US$1.28
          100
          US$0.12
          US$12.15
          500
          US$0.11
          US$57.40
          1000
          US$0.11
          US$108.00
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