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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSP316PH6327XTSA1 DISTI # V72:2272_06392019 | Infineon Technologies AG | Trans MOSFET P-CH 100V 0.68A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 12 |
|
| BSP316PH6327XTSA1 DISTI # BSP316PH6327XTSA1CT-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 278In Stock |
|
| BSP316PH6327XTSA1 DISTI # BSP316PH6327XTSA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 278In Stock |
|
| BSP316PH6327XTSA1 DISTI # BSP316PH6327XTSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
|
| BSP316P H6327 DISTI # 30575239 | Infineon Technologies AG | 0 | 170 |
|
| BSP316PH6327XTSA1 DISTI # SP001058754 | Infineon Technologies AG | Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R (Alt: SP001058754) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 1000 |
|
| BSP316PH6327XTSA1 DISTI # BSP316P H6327 | Infineon Technologies AG | Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R (Alt: BSP316P H6327) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 |
|
| BSP316PH6327XTSA1 DISTI # BSP316PH6327XTSA1 | Infineon Technologies AG | Trans MOSFET P-CH -100V -0.68A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP316PH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| BSP316PH6327XTSA1 DISTI # 68AC4420 | Infineon Technologies AG | MOSFET, P-CH, -100V, -0.68A, SOT-223-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-680mA,Drain Source Voltage Vds:-100V,On Resistance Rds(on):1.4ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,RoHS Compliant: Yes | 0 |
|
| BSP316PH6327XTSA1. DISTI # 31AC8231 | Infineon Technologies AG | Transistor Polarity:P Channel,Continuous Drain Current Id:-680mA,Drain Source Voltage Vds:-100V,On Resistance Rds(on):1.4ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power Dissipation Pd:1.8W,No. of Pins:4Pins | 0 |
|
| BSP316P H6327 DISTI # 726-BSP316PH6327 | Infineon Technologies AG | MOSFET P-Ch -100V -680mA SOT-223-3 RoHS: Compliant | 404 |
|
| BSP316PH6327XTSA1 DISTI # 726-BSP316PH6327XTSA | Infineon Technologies AG | MOSFET P-Ch -100V -680mA SOT-223-3 RoHS: Compliant | 1695 |
|
| BSP316P H6327 DISTI # TMOSS6542 | Infineon Technologies AG | P-CH MOS-FET 0,68A 100V SOT223 RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| BSP316PH6327 | Infineon Technologies AG | 737 | ||
| BSP316PH6327XTSA1 DISTI # 2480637 | Infineon Technologies AG | MOSFET, P-CH, -100V, -0.68A, SOT-223-4 RoHS: Compliant | 5 |
|
| BSP316PH6327 | Infineon Technologies AG | -100V,-0.68A,P-Ch Small-Signal MOSFET | 800 |
|
| BSP316PH6327XTSA1 DISTI # XSKDRABV0017816 | Infineon Technologies AG | Power Field-Effect Transistor, 1.2AI(D),100V,0.6ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 5000 in Stock0 on Order |
|
| BSP316PH6327XTSA1 DISTI # 2480637 | Infineon Technologies AG | MOSFET, P-CH, -100V, -0.68A, SOT-223-4 RoHS: Compliant | 0 |
|
| BSP316P H6327 DISTI # C1S322000446229 | Infineon Technologies AG | MOSFETs | 170 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
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Mfr.#: BSP316 / BSP316 OMO.#: OMO-BSP316-BSP316-1190 |
全新原裝 |