 |  | | |
| PartNumber | BSP316P H6327 | BSP316PE6327 | BSP316PE6327T |
| Description | MOSFET P-Ch -100V -680mA SOT-223-3 | MOSFET P-CH 100V 0.68A SOT223 | MOSFET P-CH 100V 0.68A SOT223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 680 mA | - | - |
| Rds On Drain Source Resistance | 1.4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | - 6.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP316 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 500 mS | - | - |
| Fall Time | 25.9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 67.4 ns | - | - |
| Typical Turn On Delay Time | 4.7 ns | - | - |
| Part # Aliases | BSP316PH6327XTSA1 SP001058754 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP316PH6327XTSA1 | MOSFET P-Ch -100V -680mA SOT-223-3 | |
| BSP316P H6327 | MOSFET P-Ch -100V -680mA SOT-223-3 | ||
| BSP316PH6327XTSA1 | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP316PL6327HTSA1 | MOSFET P-CH 100V 0.68A SOT-223 | ||
| BSP316PE6327 | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP316PE6327T | MOSFET P-CH 100V 0.68A SOT223 | ||
| BSP316 | 全新原裝 | ||
| BSP316 / BSP316 | 全新原裝 | ||
| BSP316 E6327 | 全新原裝 | ||
| BSP316 L6327 | 全新原裝 | ||
| BSP316E6327 | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP316P | 全新原裝 | ||
| BSP316P E6327 | 全新原裝 | ||
| BSP316P H6327 | MOSFET P-Ch -100V -680mA SOT-223-3 | ||
| BSP316P L6327 | MOSFET P-Ch -100V 680mA SOT-223-3 | ||
| BSP316P/BSP316 | 全新原裝 | ||
| BSP316PE6327XTINCT | 全新原裝 | ||
| BSP316PH6327 | -100V,-0.68A,P-Ch Small-Signal MOSFET | ||
| BSP316PL6327 | Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP316PL6327XT | 全新原裝 | ||
| BSP316S | 全新原裝 |