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IPW60R080P7XKSA1

IPW60R080P7XKSA1
Mfr. #:
IPW60R080P7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPW60R080P7XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IPW60R080P7XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
37 A
Rds On - 漏源電阻：
69 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
51 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
129 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
系列：
CoolMOS P7
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
5 ns
產品類別：
MOSFET
上升時間：
10 ns
出廠包裝數量：
240
子類別：
MOSFET
典型關斷延遲時間：
70 ns
典型的開啟延遲時間：
15 ns
第 # 部分別名：
IPW60R080P7 SP001647040
單位重量：
0.211644 oz
Tags
IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 37A
***i-Key
MOSFET N-CH 600V 37A TO247-3
***ronik
N-CH 600V 37A 80mOhm TO-247
***et Europe
HIGH POWER_NEW
***ark
Mosfet, N-Ch, 600V, 37A, 129W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 37A, 129W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:129W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 37A, 129W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:37A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:129W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPW60R080P7XKSA1
DISTI # V36:1790_18196277		Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.6110
  • 120000:$2.6150
  • 24000:$3.0300
  • 2400:$3.8240
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # V99:2348_18196277		Infineon Technologies AGIPW60R080P7XKSA10
  • 240000:$2.8070
  • 120000:$2.8100
  • 24000:$3.1710
  • 2400:$3.8450
  • 240:$3.9600
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 37A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		433In Stock
  • 2640:$3.1304
  • 720:$3.9071
  • 240:$4.5897
  • 25:$5.2956
  • 10:$5.6020
  • 1:$6.2400
IPW60R080P7XKSA1
DISTI # SP001647040		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001647040)
RoHS: Compliant
Min Qty: 1		Europe - 170
  • 1000:€2.3900
  • 500:€2.5900
  • 100:€2.6900
  • 50:€2.7900
  • 25:€2.8900
  • 10:€3.0900
  • 1:€3.2900
IPW60R080P7XKSA1
DISTI # IPW60R080P7XKSA1		Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPW60R080P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.7900
  • 2400:$2.7900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.1900
IPW60R080P7XKSA1
DISTI # 93AC7139		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes230
  • 500:$3.7600
  • 250:$4.1800
  • 100:$4.4100
  • 50:$4.6400
  • 25:$4.8600
  • 10:$5.0900
  • 1:$5.9900
IPW60R080P7XKSA1
DISTI # 726-IPW60R080P7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		929
  • 1:$5.9300
  • 10:$5.0400
  • 100:$4.3700
  • 250:$4.1400
  • 500:$3.7200
IPW60R080P7XKSA1
DISTI # XSKDRABV0050081		Infineon Technologies AG 
RoHS: Compliant		192 in Stock0 on Order
  • 192:$3.9300
  • 119:$4.2100
IPW60R080P7XKSA1
DISTI # 2986487		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247
RoHS: Compliant		230
  • 100:$6.3400
  • 10:$7.3000
  • 1:$9.4800
IPW60R080P7XKSA1
DISTI # 2986487		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, 129W, TO-247230
  • 500:£2.7000
  • 250:£3.0000
  • 100:£3.1700
  • 10:£3.6500
  • 1:£4.7600
圖片 型號 描述
1EDN7550BXTSA1

Mfr.#: 1EDN7550BXTSA1

OMO.#: OMO-1EDN7550BXTSA1

 Gate Drivers DRIVER IC
UCC27714DR

Mfr.#: UCC27714DR

OMO.#: OMO-UCC27714DR

 Gate Drivers HV Gate Driver
DZ9F16S92-7

Mfr.#: DZ9F16S92-7

OMO.#: OMO-DZ9F16S92-7

 Zener Diodes Zerner Diode Ultra-Small SOD923
IPW60R070CFD7XKSA1

Mfr.#: IPW60R070CFD7XKSA1

OMO.#: OMO-IPW60R070CFD7XKSA1

 MOSFET HIGH POWER_NEW
NVMFS6H818NT1G

Mfr.#: NVMFS6H818NT1G

OMO.#: OMO-NVMFS6H818NT1G

 MOSFET TRENCH 8 80V NFET
EMHS800ARA241MKG5S

Mfr.#: EMHS800ARA241MKG5S

OMO.#: OMO-EMHS800ARA241MKG5S

 Aluminum Electrolytic Capacitors - SMD 240uF 20% 80V AEC-Q200
C1206C104KARECAUTO

Mfr.#: C1206C104KARECAUTO

OMO.#: OMO-C1206C104KARECAUTO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.1uF X7R 1206 10% AEC-Q200
DZ9F16S92-7

Mfr.#: DZ9F16S92-7

OMO.#: OMO-DZ9F16S92-7-DIODES

 DIODE ZENER 16V 200MW SOD923
IPW60R070CFD7XKSA1

Mfr.#: IPW60R070CFD7XKSA1

OMO.#: OMO-IPW60R070CFD7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V TO247-3
EMHS800ARA241MKG5S

Mfr.#: EMHS800ARA241MKG5S

OMO.#: OMO-EMHS800ARA241MKG5S-UNITED-CHEMI-CON

 Aluminum Electrolytic Capacitors - SMD 240uF 20% 80V AEC-Q200
可用性
庫存:
349
訂購:
2332
輸入數量:
IPW60R080P7XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.93
US$5.93
10
US$5.04
US$50.40
100
US$4.37
US$437.00
250
US$4.14
US$1 035.00
500
US$3.72
US$1 860.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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