IPW60R070CFD7XKSA1

Mfr. #:: IPW60R070CFD7XKSA1
製造商:: Infineon Technologies
描述:: MOSFET HIGH POWER_NEW
生命週期:: 製造商新產品
數據表:: IPW60R070CFD7XKSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IPW60R070CFD7XKSA1 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-247-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 31 A

Rds On - 漏源電阻：: 57 mOhms

Vgs th - 柵源閾值電壓：: 3.5 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 67 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 156 W

配置：: 單身的

頻道模式：: 增強

商品名：: 酷摩

打包：: 管子

系列：: CoolMOS CFD7

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

秋季時間：: 6 ns

產品類別：: MOSFET

上升時間：: 23 ns

出廠包裝數量：: 240

子類別：: MOSFET

典型關斷延遲時間：: 99 ns

典型的開啟延遲時間：: 26 ns

第 # 部分別名：: IPW60R070CFD7 SP001617990

Tags: IPW60R070C, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R070CFD7XKSA1 描述

***et Europe: CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3

***ark: Mosfet, N-Ch, 600V, 31A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:

IPW60R070CFD7XKSA1 更多信息

CFD7 CoolMOS™ MOSFETs: Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型號	製造商	描述	庫存	價格
IPW60R070CFD7XKSA1 DISTI # V99:2348_18786389	Infineon Technologies AG	HIGH POWER_NEW	230	500:$4.6710 250:$4.9240 100:$5.2050 25:$6.1750 10:$6.4710 1:$7.8650
IPW60R070CFD7XKSA1 DISTI # V36:1790_18786389	Infineon Technologies AG	HIGH POWER_NEW	0	240000:$3.5240 120000:$3.5290 24000:$4.2970 2400:$5.9060 240:$6.1900
IPW60R070CFD7XKSA1 DISTI # IPW60R070CFD7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	384In Stock	720:$4.9237 240:$5.6543 25:$6.5120 10:$6.8300 1:$7.5600
IPW60R070CFD7XKSA1 DISTI # 32740012	Infineon Technologies AG	HIGH POWER_NEW	230	2:$7.8650
IPW60R070CFD7XKSA1 DISTI # 33637520	Infineon Technologies AG	HIGH POWER_NEW	75	3:$3.7891
IPW60R070CFD7XKSA1 DISTI # IPW60R070CFD7XKSA1	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R070CFD7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$3.7900 1440:$3.8900 960:$3.9900 480:$4.1900 240:$4.2900
IPW60R070CFD7XKSA1 DISTI # SP001617990	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 247-3 (Alt: SP001617990) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€3.4900 500:€3.5900 100:€3.6900 50:€3.7900 25:€3.9900 10:€4.3900 1:€5.3900
IPW60R070CFD7XKSA1 DISTI # 43AC9330	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	141	500:$4.7300 250:$5.1900 100:$5.4300 50:$5.8500 25:$6.2600 10:$6.5700 1:$7.2600
IPW60R070CFD7XKSA1 DISTI # 726-IPW60R070CFD7XKS	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	7414	1:$7.1900 10:$6.5000 25:$6.2000 100:$5.3800 250:$5.1400 500:$4.6800
IPW60R070CFD7XKSA1 DISTI # 2807983	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247	861	100:£4.1500 50:£4.4700 10:£4.7800 5:£5.5400 1:£6.0700
IPW60R070CFD7XKSA1 DISTI # 2807983	Infineon Technologies AG	MOSFET, N-CH, 600V, 31A, TO-247 RoHS: Compliant	191	250:$6.0600 100:$6.1700 50:$6.5100 10:$6.8900 5:$7.7900 1:$8.3300

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