STGWT80V60DF

Mfr. #:: STGWT80V60DF
製造商:: STMicroelectronics
描述:: IGBT Transistors Trench gte FieldStop IGBT 600V 80A
生命週期:: 製造商新產品
數據表:: STGWT80V60DF 數據表
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ECAD Model:
更多信息:: STGWT80V60DF 更多信息 STGWT80V60DF Product Details

產品屬性
屬性值

製造商：: 意法半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-3P

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

集電極-發射極飽和電壓：: 1.85 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 120 A

Pd - 功耗：: 469 W

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

系列：: STGWT80V60DF

打包：: 管子

連續集電極電流 Ic 最大值：: 80 A

品牌：: 意法半導體

柵極-發射極漏電流：: 250 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 300

子類別：: IGBT

單位重量：: 0.238311 oz

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80V60DF 評級和評論

D***v

Set

2019-01-18

P***v

Very long

2019-03-05

STGWT80V60DF 描述

***va Crawler: Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

***ical: Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube

***ment14 APAC: IGBT, SINGLE, 600V, 120A, TO-3P-3

***i-Key: IGBT 600V 120A 469W TO-3P

***ark: Igbt, Single, 600V, 120A, To-3P-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes

STGWT80V60DF 更多信息

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

型號	製造商	描述	庫存	價格
STGWT80V60DF DISTI # 497-14563-5-ND	STMicroelectronics	IGBT 600V 120A 469W TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	1In Stock	510:$5.6800 120:$6.5228 30:$7.5123 10:$7.8790 1:$8.7200
STGWT80V60DF DISTI # STGWT80V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube (Alt: STGWT80V60DF) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.4900 500:€3.6900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.3900 1:€4.7900
STGWT80V60DF DISTI # STGWT80V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80V60DF) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	3000:$4.3900 1500:$4.4900 900:$4.6900 600:$4.8900 300:$5.1900
STGWT80V60DF DISTI # 98Y2475	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes	298	500:$5.4600 250:$5.9900 100:$6.2700 50:$6.7500 25:$7.2200 10:$7.5800 1:$8.3800
STGWT80V60DF DISTI # 511-STGWT80V60DF	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 600V 80A RoHS: Compliant	69	1:$8.3000 10:$7.5000 25:$7.1500 100:$6.2100 250:$5.9300 500:$5.4100 1000:$4.7100
STGWT80V60DF DISTI # 2629743	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3 RoHS: Compliant	294	1:$13.2100
STGWT80V60DF DISTI # 2629743	STMicroelectronics	IGBT, SINGLE, 600V, 120A, TO-3P-3 RoHS: Compliant	294	100:£5.7200 50:£5.7300 10:£5.7400 5:£5.7500 1:£6.1900

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