STGWT80H65FB

Mfr. #:: STGWT80H65FB
製造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命週期:: 製造商新產品
數據表:: STGWT80H65FB 數據表
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更多信息:: STGWT80H65FB 更多信息 STGWT80H65FB Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: IGBT - 單

系列: 600-650V IGBTs

打包: 管子

單位重量: 0.238311 oz

安裝方式: 通孔

包裝盒: TO-3P-3, SC-65-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-3P

配置: 單身的

最大功率: 469W

反向恢復時間trr: -

電流收集器 Ic-Max: 120A

電壓收集器發射極擊穿最大值: 650V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 80A

開關能源: 2.1mJ (on), 1.5mJ (off)

柵極電荷: 414nC

Td-on-off-25°C: 84ns/280ns

測試條件: 400V, 80A, 10 Ohm, 15V

鈀功耗: 469 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.6 V

25-C 時的連續集電極電流: 120 A

柵極-發射極-漏電流: 250 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 80 A

Tags: STGWT8, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT80H65FB 描述

***Components: In a Tube of 30, STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 80A TO-3P

***i-Key: IGBT 650V 120A 469W TO3P-3L

***ark: Ptd High Voltage

STGWT80H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型號	製造商	描述	庫存	價格
STGWT80H65FB DISTI # 497-15141-5-ND	STMicroelectronics	IGBT 650V 120A 469W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	295In Stock	1020:$7.2800 510:$7.9170 120:$8.8998 30:$10.1010 1:$11.4700
STGWT80H65FB DISTI # STGWT80H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65FB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.7900 10:€4.3900 25:€4.1900 50:€3.9900 100:€3.8900 500:€3.6900 1000:€3.4900
STGWT80H65FB DISTI # STGWT80H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65FB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	300:$7.6900 360:$7.3900 660:$6.9900 1500:$6.6900 3000:$6.5900
STGWT80H65FB DISTI # 26Y5808	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$6.5000
STGWT80H65FB DISTI # 511-STGWT80H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed RoHS: Compliant	0	1:$10.9100 10:$10.0300 25:$9.6200 100:$8.4700 250:$8.0600 500:$7.5400 1000:$6.9100
STGWT80H65FB DISTI # 8297145P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 80A TO-3P, TU	67	20:£4.3900 10:£4.9600
STGWT80H65FB	STMicroelectronics		299

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