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IXFN360N15T2

IXFN360N15T2
Mfr. #:
IXFN360N15T2
製造商:
Littelfuse
描述:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
生命週期:
製造商新產品
數據表:
IXFN360N15T2 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN360N15T2 DatasheetIXFN360N15T2 Datasheet (P4-P6)
ECAD Model:
更多信息:
IXFN360N15T2 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
底盤安裝
包裝/案例：
SOT-227-4
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
150 V
Id - 連續漏極電流：
310 A
Rds On - 漏源電阻：
4 mOhms
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
配置：
單身的
商品名：
高功率場效應晶體管
打包：
管子
系列：
IXFN360N15
晶體管類型：
1 N-Channel
類型：
GigaMOS Trench T2 HiperFet
品牌：
IXYS
秋季時間：
265 ns
產品類別：
MOSFET
上升時間：
170 ns
出廠包裝數量：
10
子類別：
MOSFET
單位重量：
1.058219 oz
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2
***ure Electronics
N-Channel 150 V 1070 W 715 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
***p One Stop Global
Trans MOSFET N-CH 150V 310A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 150V 310A SOT227
***ukat
N-Ch 150V 310A 1070W 0,004R SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
型號 製造商 描述 庫存 價格
IXFN360N15T2
DISTI # V99:2348_15877372		IXYS CorporationTrans MOSFET N-CH 150V 310A 4-Pin SOT-227B
RoHS: Compliant		8
  • 250:$25.7600
  • 100:$28.3500
  • 25:$30.7900
  • 10:$33.8300
  • 1:$36.9099
IXFN360N15T2
DISTI # IXFN360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 310A SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		913In Stock
  • 100:$29.2774
  • 30:$31.5010
  • 10:$34.2810
  • 1:$37.0600
IXFN360N15T2
DISTI # 32906835		IXYS CorporationTrans MOSFET N-CH 150V 310A 4-Pin SOT-227B
RoHS: Compliant		8
  • 1:$36.9099
IXFN360N15T2
DISTI # 747-IXFN360N15T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		121
  • 1:$37.0600
  • 5:$35.2100
  • 10:$34.2800
  • 25:$31.5000
  • 50:$30.1600
  • 100:$29.2700
  • 200:$26.8600
IXFN360N15T2
DISTI # 1258042		IXYS CorporationMOSFET 360A 150V SOT227, EA135
  • 25:£21.9000
  • 10:£22.7000
  • 5:£23.7500
  • 1:£26.3900
IXFN360N15T2
DISTI # IXFN360N15T2		IXYS CorporationN-Ch 150V 310A 1070W 0,004R SOT227B
RoHS: Compliant		11
  • 1:€30.4500
  • 5:€26.4500
  • 10:€24.4500
  • 25:€23.5400
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可用性
庫存:
121
訂購:
2104
輸入數量:
IXFN360N15T2的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$37.06
US$37.06
5
US$35.21
US$176.05
10
US$34.28
US$342.80
25
US$31.50
US$787.50
50
US$30.16
US$1 508.00
100
US$29.27
US$2 927.00
200
US$26.86
US$5 372.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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