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CSD13306WT

CSD13306WT
Mfr. #:
CSD13306WT
描述:
MOSFET N-CH 12V 6DSBGA
生命週期:
製造商新產品
數據表:
CSD13306WT 數據表
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CSD13306WT 更多信息 CSD13306WT Product Details
產品屬性
屬性值
製造商
德州儀器
產品分類
晶體管 - FET、MOSFET - 單
系列
CSD13306W
打包
捲軸
單位重量
0.000060 oz
安裝方式
貼片/貼片
商品名
場效應管
包裝盒
DSBGA-6
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
1.9 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
8 ns
上升時間
11 ns
VGS-柵極-源極-電壓
10 V
Id 連續漏極電流
3.5 A
Vds-漏-源-擊穿電壓
12 V
VGS-th-Gate-Source-Threshold-Voltage
700 mV
Rds-On-Drain-Source-Resistance
15.5 mOhms
晶體管極性
N通道
典型關斷延遲時間
20 ns
典型開啟延遲時間
7 ns
Qg-門電荷
8.6 nC
正向跨導最小值
15 S
通道模式
增強
Tags
CSD1330, CSD133, CSD13, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 10.2mOhm 6-DSBGA -55 to 150
***et
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
***i-Key
MOSFET N-CH 12V 6DSBGA
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型號 描述 庫存 價格
CSD13306WT
DISTI # 296-41134-1-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-6-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1880In Stock
  • 100:$0.4202
  • 10:$0.5600
  • 1:$0.6700
CSD13306WT
DISTI # 296-41134-2-ND		MOSFET N-CH 12V 6DSBGA
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		1750In Stock
  • 1250:$0.2312
  • 750:$0.2584
  • 500:$0.2992
  • 250:$0.3536
CSD13306WT
DISTI # CSD13306WT		Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13306WT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Asia - 0
    CSD13306WT
    DISTI # CSD13306WT    		Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13306WT)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 2000:$0.1969
    • 2500:$0.1869
    • 4500:$0.1809
    • 10000:$0.1749
    • 20000:$0.1699
    CSD13306WTCSD13306W 12 V N-Channel NexFET&#153,Power MOSFET500
    • 1000:$0.1600
    • 750:$0.1700
    • 500:$0.2200
    • 250:$0.2700
    • 100:$0.2900
    • 25:$0.3400
    • 10:$0.3600
    • 1:$0.4100
    CSD13306W
    DISTI # 595-CSD13306W    		MOSFET CSD13306W 12 V N-Channel NexFET Power MOSFET 6-DSBGA
    RoHS: Compliant    		3100
    • 1:$0.5200
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 3000:$0.1730
    • 9000:$0.1610
    • 24000:$0.1530
    • 45000:$0.1490
    CSD13306WT
    DISTI # 595-CSD13306WT    		MOSFET 12V N-Channel NexFET Power MOSFET
    RoHS: Compliant    		0
    • 1:$0.5900
    • 10:$0.4900
    • 100:$0.3000
    • 250:$0.3000
    • 1000:$0.2320
    • 2500:$0.1980
    • 10000:$0.1840
    • 25000:$0.1750
    CSD13306WTSmall Signal Field-Effect Transistor
    RoHS: Compliant    		250
    • 1000:$0.1800
    • 500:$0.1900
    • 100:$0.2000
    • 25:$0.2100
    • 1:$0.2300
    圖片 型號 描述
    CSD13201W10

    Mfr.#: CSD13201W10

    OMO.#: OMO-CSD13201W10

    		 MOSFET N-CH NexFET Pwr MOSFET
    CSD13302W

    Mfr.#: CSD13302W

    OMO.#: OMO-CSD13302W

    		 MOSFET 12V, N ch NexFET MOSFETG , single WLP 1.0x1.0, 17.1mOhm 4-DSBGA
    CSD13383F4T

    Mfr.#: CSD13383F4T

    OMO.#: OMO-CSD13383F4T

    		 MOSFET 12V N-Channel FemtoFET MOSFET
    CSD1306E

    Mfr.#: CSD1306E

    OMO.#: OMO-CSD1306E-TEXAS-INSTRUMENTS

    		 全新原裝
    CSD1306E(06)

    Mfr.#: CSD1306E(06)

    OMO.#: OMO-CSD1306E-06--TEXAS-INSTRUMENTS

    		 全新原裝
    CSD13382F4

    Mfr.#: CSD13382F4

    OMO.#: OMO-CSD13382F4-TEXAS-INSTRUMENTS

    		 全新原裝
    CSD13383F4TI

    Mfr.#: CSD13383F4TI

    OMO.#: OMO-CSD13383F4TI-TEXAS-INSTRUMENTS

    		 全新原裝
    CSD13306WT

    Mfr.#: CSD13306WT

    OMO.#: OMO-CSD13306WT-TEXAS-INSTRUMENTS

    		 MOSFET N-CH 12V 6DSBGA
    CSD13202Q2

    Mfr.#: CSD13202Q2

    OMO.#: OMO-CSD13202Q2-TEXAS-INSTRUMENTS

    		 MOSFET N-CH 12V 76A 6SON
    CSD13303W1015

    Mfr.#: CSD13303W1015

    OMO.#: OMO-CSD13303W1015-TEXAS-INSTRUMENTS

    		 Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
    可用性
    庫存:
    Available
    訂購:
    5500
    輸入數量:
    CSD13306WT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.24
    US$0.24
    10
    US$0.23
    US$2.28
    100
    US$0.22
    US$21.60
    500
    US$0.20
    US$102.00
    1000
    US$0.19
    US$192.00
    從...開始
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