SIHF30N60E-GE3

SIHF30N60E-GE3
Mfr. #:
SIHF30N60E-GE3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHF30N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
SIHF30N60E-GE3 更多信息
產品屬性
屬性值
Tags
SIHF3, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SiHF30N60E-GE3
***ure Electronics
E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***p One Stop Global
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ical
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP
***ark
MOSFET, N-CH, 600V, 21A, TO-220FP
***i-Key
MOSFET N-CH 600V 29A TO220
***
600V N-CHANNEL
***nell
MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:37W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHF30N60E-GE3
DISTI # SIHF30N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 29A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
1820In Stock
  • 1000:$3.3880
  • 500:$4.0172
  • 100:$4.9610
  • 10:$6.0500
  • 1:$6.7800
SIHF30N60E-GE3
DISTI # SIHF30N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF30N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.1900
  • 2000:$3.0900
  • 4000:$2.8900
  • 6000:$2.7900
  • 10000:$2.7900
SIHF30N60E-GE3
DISTI # 19X1937
Vishay IntertechnologiesPower MOSFET, N Channel, 29 A, 600 V, 0.104 ohm, 10 V, 2 V RoHS Compliant: Yes1313
  • 1:$6.1700
  • 10:$5.1100
  • 25:$4.8100
  • 50:$4.5100
  • 100:$4.2100
  • 500:$3.6600
SIHF30N60E-GE3
DISTI # 78-SIHF30N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
470
  • 1:$6.1700
  • 10:$5.1100
  • 100:$4.2100
  • 250:$4.0800
  • 500:$3.6600
SIHF30N60E-E3
DISTI # 781-SIHF30N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
195
  • 1:$6.1700
  • 10:$5.1100
  • 100:$4.2100
SIHF30N60E-GE3
DISTI # 9034490P
Vishay IntertechnologiesMOSFET 600V 29A E SERIES TO-220FP, TU996
  • 10:£4.1700
  • 40:£3.6500
  • 100:£3.4100
  • 200:£3.2550
SIHF30N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
Europe - 1000
    SIHF30N60E-GE3
    DISTI # 2364079
    Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, TO-220FP
    RoHS: Compliant
    1713
    • 1:£4.7800
    • 10:£3.6900
    • 100:£3.2200
    • 250:£3.1200
    • 500:£2.8000
    SIHF30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant
    Americas -
      SIHF30N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
      RoHS: Compliant
      Americas -
        SIHF30N60E-GE3
        DISTI # 2364079
        Vishay IntertechnologiesMOSFET, N-CH, 600V, 21A, TO-220FP
        RoHS: Compliant
        1313
        • 1:$9.7700
        • 10:$8.0900
        • 100:$6.6600
        • 250:$6.4600
        • 500:$5.8000
        圖片 型號 描述
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3-126

        IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3-VISHAY

        RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
        可用性
        庫存:
        Available
        訂購:
        2500
        輸入數量:
        SIHF30N60E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$4.18
        US$4.18
        10
        US$3.98
        US$39.76
        100
        US$3.77
        US$376.65
        500
        US$3.56
        US$1 778.65
        1000
        US$3.35
        US$3 348.00
        由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
        從...開始
        Top