SIHF30N60E-E3

SIHF30N60E-E3
Mfr. #:
SIHF30N60E-E3
製造商:
Vishay / Siliconix
描述:
IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
生命週期:
製造商新產品
數據表:
SIHF30N60E-E3 數據表
交貨:
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ECAD Model:
更多信息:
SIHF30N60E-E3 更多信息
產品屬性
屬性值
製造商
威世
產品分類
集成電路芯片
系列
E
打包
管子
單位重量
0.211644 oz
安裝方式
通孔
商品名
E系列
包裝盒
TO-220-3
技術
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
37 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
29 A
Vds-漏-源-擊穿電壓
600 V
Rds-On-Drain-Source-Resistance
125 mOhms
晶體管極性
N通道
Qg-門電荷
85 nC
正向跨導最小值
5.4 S
Tags
SIHF3, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP
***nell
MOSFET, N CH, 600V, 29A, TO-220 FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHF30N60E-E3
DISTI # V36:1790_14140830
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
0
  • 1000000:$3.0000
  • 500000:$3.0050
  • 100000:$3.9020
  • 10000:$5.8200
  • 1000:$6.1600
SIHF30N60E-E3
DISTI # SIHF30N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak - Tape and Reel (Alt: SIHF30N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$2.7900
  • 10000:$2.7900
  • 4000:$2.8900
  • 2000:$3.0900
  • 1000:$3.1900
SIHF30N60E-GE3
DISTI # 78-SIHF30N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
0
  • 1:$5.8300
  • 10:$4.9400
  • 100:$4.2300
  • 250:$4.1700
  • 500:$4.1600
  • 1000:$3.0800
  • 2500:$2.9200
SIHF30N60E-E3
DISTI # 781-SIHF30N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
0
  • 1:$6.1600
  • 10:$5.0900
  • 100:$4.2000
  • 250:$4.1900
  • 500:$4.1800
SIHF30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant
Americas -
    SIHF30N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant
    Americas -
      SIHF30N60E-E3
      DISTI # 7689322
      Vishay IntertechnologiesSIHF30N60E-E3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-220FP Vishay, EA
      Min Qty: 1
      Container: Bulk
      131
      • 1:$7.7900
      • 5:$7.1980
      SIHF30N60EE3Vishay IntertechnologiesPower Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant
      Europe - 1000
        圖片 型號 描述
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF30N60E-E3

        Mfr.#: SIHF30N60E-E3

        OMO.#: OMO-SIHF30N60E-E3-126

        IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
        SIHF30N60E-GE3

        Mfr.#: SIHF30N60E-GE3

        OMO.#: OMO-SIHF30N60E-GE3-VISHAY

        RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
        可用性
        庫存:
        Available
        訂購:
        2500
        輸入數量:
        SIHF30N60E-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$4.18
        US$4.18
        10
        US$3.98
        US$39.76
        100
        US$3.77
        US$376.65
        500
        US$3.56
        US$1 778.65
        1000
        US$3.35
        US$3 348.00
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