S29GL01GS11TFV010

Mfr. #:: S29GL01GS11TFV010
製造商:: Cypress Semiconductor
描述:: Flash Memory 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
生命週期:: 製造商新產品
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更多信息:: S29GL01GS11TFV010 更多信息 S29GL01GS11TFV010 Product Details

產品屬性
屬性值

製造商: 賽普拉斯半導體公司

產品分類: 記憶

系列: GL-S

打包: 托盤替代包裝

安裝方式: 貼片/貼片

工作溫度範圍: - 40 C to + 105 C

包裝盒: TSOP-56

工作溫度: -40°C ~ 105°C (TA)

界面: 平行線

電壓供應: 2.7 V ~ 3.6 V

供應商-設備-包: 56-TSOP

內存大小: 1G (64M x 16)

內存型: 閃存 - NOR

速度: 110ns

建築學: MirrorBit Eclipse

格式化內存: 閃光

標準: 通用閃存接口 (CFI)

接口類型: 平行線

組織: 128 M x 8

電源電流最大值: 100 mA

數據總線寬度: 8 bit

最大電源電壓: 3.6 V

電源電壓最小值: 2.7 V

時序型: 異步

Tags: S29GL01GS11TFV, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS11TFV010 描述

***ress Semiconductor SCT: Parallel NOR Flash Memory, 1024 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS

***ical: NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 56-Pin TSOP Tray

***ark: TRAY PKGED / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED

S29GL01GS11TFV010 更多信息

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

型號	製造商	描述	庫存	價格
IS29GL01GS-11TFV010 DISTI # IS29GL01GS-11TFV010-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL RoHS: Compliant Min Qty: 91 Container: Tray	Limited Supply - Call
S29GL01GS11TFV010 DISTI # S29GL01GS11TFV010-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 56TSOP RoHS: Compliant Min Qty: 91 Container: Tray	Temporarily Out of Stock	91:$10.9708
S29GL01GS11TFV010 DISTI # 727-S29GL01GS11TFV01	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	41	1:$14.1000 10:$12.8200 25:$11.8600 50:$10.9000
IS29GL01GS-11TFV010 DISTI # 727-IS29GL01GSTFV010	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0

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