SIE810DF-T1-E3

Mfr. #:: SIE810DF-T1-E3
製造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
生命週期:: 製造商新產品
數據表:: SIE810DF-T1-E3 數據表
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更多信息:: SIE810DF-T1-E3 更多信息

產品屬性
屬性值

製造商: 威世

產品分類: FET - 單

打包: 捲軸

部分別名: SIE810DF-E3

安裝方式: 貼片/貼片

包裝盒: PolarPAK-10

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 5.2 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 15 ns 10 ns

上升時間: 95 ns 70 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 45 A

Vds-漏-源-擊穿電壓: 20 V

Rds-On-Drain-Source-Resistance: 1.4 mOhms

晶體管極性: N通道

典型關斷延遲時間: 95 ns 100 ns

典型開啟延遲時間: 40 ns 20 ns

通道模式: 增強

Tags: SIE81, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE810DF-T1-E3 描述

***ure Electronics: Dual N-Channel 20 V 0.02 Ohms Surface Mount Power Mosfet -POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:236A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; Base Number:810; Current Id Max:60A; N-channel Gate Charge:90nC; On State Resistance @ Vgs = 2.5V:2.7mohm; On State Resistance @ Vgs = 4.5V:1.6mohm; On State resistance @ Vgs = 10V:1.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.8V

SIE810DF-T1-E3 更多信息

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

型號	製造商	描述	庫存	價格
SIE810DF-T1-E3 DISTI # SIE810DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE810DF-T1-E3 DISTI # SIE810DF-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE810DF-T1-E3 DISTI # 22M8804	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE810DF-T1-E3 DISTI # 69W7162	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes	0	1:$3.4800 25:$2.8800 50:$2.6300 100:$2.3700 250:$2.3000 500:$2.0700
SIE810DF-T1-E3 DISTI # 781-SIE810DF-T1-E3	Vishay Intertechnologies	MOSFET 20V 60A 125W 1.4mohm @ 10V RoHS: Compliant	0	1:$3.4800 10:$2.8800 100:$2.3700 250:$2.3000 500:$2.0700
SIE810DF-T1-E3	Vishay Intertechnologies	MOSFET 20V 60A 125W 1.4mohm @ 10V	Americas -
SIE810DF-T1-E3 DISTI # 1497642	Vishay Intertechnologies	RoHS: Compliant	0	1:$5.5100 10:$4.5600 100:$3.7500 250:$3.6500 500:$3.2800 3000:$3.2800

相關產品

圖片	型號	描述
	Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3	MOSFET 20V 60A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3	MOSFET 20V 236A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V

可用性

庫存:: Available
訂購:: 5000
輸入數量:

SIE810DF-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$2.24~~; ~~US$2.24~~

10: ~~US$2.12~~; ~~US$21.23~~

100: ~~US$2.01~~; ~~US$201.15~~

500: ~~US$1.90~~; ~~US$949.90~~

1000: ~~US$1.79~~; ~~US$1 788.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SIE81 11
SIE8 63
SIE 169

SIE810DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes