OMO ElectronicOMO Electronic
Expand menu
0 購物車

SIE810DF-T1-E3

SIE810DF-T1-E3
Mfr. #:
SIE810DF-T1-E3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V 60A 125W 1.4mohm @ 10V
生命週期:
製造商新產品
數據表:
SIE810DF-T1-E3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE810DF-T1-E3 Datasheet
ECAD Model:
更多信息:
SIE810DF-T1-E3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
E
技術：
矽
商品名：
TrenchFET、PolarPAK
打包：
捲軸
系列：
SIE
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
第 # 部分別名：
SIE810DF-E3
Tags
SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.02 Ohms Surface Mount Power Mosfet -POLARPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:236A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; Base Number:810; Current Id Max:60A; N-channel Gate Charge:90nC; On State Resistance @ Vgs = 2.5V:2.7mohm; On State Resistance @ Vgs = 4.5V:1.6mohm; On State resistance @ Vgs = 10V:1.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.8V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型號 製造商 描述 庫存 價格
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-E3
DISTI # SIE810DF-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-E3
DISTI # 22M8804		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SIE810DF-T1-E3
DISTI # 69W7162		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 60A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes0
  • 1:$3.4800
  • 25:$2.8800
  • 50:$2.6300
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3
DISTI # 781-SIE810DF-T1-E3		Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10V
RoHS: Compliant		0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0700
SIE810DF-T1-E3Vishay IntertechnologiesMOSFET 20V 60A 125W 1.4mohm @ 10VAmericas -
    SIE810DF-T1-E3
    DISTI # 1497642    		Vishay Intertechnologies 
    RoHS: Compliant    		0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.2800
    • 3000:$3.2800
    圖片 型號 描述
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    		 MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    		 MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    可用性
    庫存:
    Available
    訂購:
    5500
    輸入數量:
    SIE810DF-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$3.48
    US$3.48
    10
    US$2.88
    US$28.80
    100
    US$2.37
    US$237.00
    250
    US$2.30
    US$575.00
    500
    US$2.07
    US$1 035.00
    從...開始
    最新產品
    More Newest Products
    Top