CGHV1J006D-GP4

CGHV1J006D-GP4
Mfr. #:
CGHV1J006D-GP4
製造商:
N/A
描述:
RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
生命週期:
製造商新產品
數據表:
CGHV1J006D-GP4 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
CGHV1J006D-GP4 更多信息
產品屬性
屬性值
製造商:
克里公司
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵
獲得:
17 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Vgs - 柵源擊穿電壓:
- 10 V to 2 V
Id - 連續漏極電流:
0.8 A
輸出功率:
6 W
最大漏柵電壓:
-
最低工作溫度:
-
最高工作溫度:
-
Pd - 功耗:
-
安裝方式:
貼片/貼片
包裝/案例:
打包:
凝膠包
應用:
-
配置:
單身的
高度:
100 um
長度:
840 um
工作頻率:
10 MHz to 18 GHz
工作溫度範圍:
-
產品:
氮化鎵 HEMT
寬度:
800 um
品牌:
Wolfspeed / 克里
柵源截止電壓:
-
班級:
-
開發套件:
-
秋季時間:
-
NF - 噪聲係數:
-
P1dB - 壓縮點:
-
產品類別:
射頻 JFET 晶體管
Rds On - 漏源電阻:
2.3 Ohms
上升時間:
-
出廠包裝數量:
10
子類別:
晶體管
典型關斷延遲時間:
-
Vgs th - 柵源閾值電壓:
- 3 V
Tags
CGHV1J, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***fspeed SCT
Aerospace & Defense, 40 V, 18 GHz, 6W, Die, RoHS
***i-Key
RF MOSFET HEMT 40V DIE
***fspeed
6-W; 18.0-GHz; GaN HEMT Die
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型號 製造商 描述 庫存 價格
CGHV1J006D-GP4
DISTI # CGHV1J006D-GP4-ND
WolfspeedRF MOSFET HEMT 40V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
30In Stock
  • 10:$28.4500
CGHV1J006D-GP4
DISTI # 941-CGHV1J006D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
RoHS: Compliant
100
  • 10:$31.9200
CGHV1J006D-GP4
DISTI # CGHV1J006D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$29.7400
圖片 型號 描述
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Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F

RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt
CGA2B3X7R1H104K050BE

Mfr.#: CGA2B3X7R1H104K050BE

OMO.#: OMO-CGA2B3X7R1H104K050BE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0402 50V 0.1uF X7R 10% AEC-Q200
44531

Mfr.#: 44531

OMO.#: OMO-44531-WIHA

Tweezers, ESD Safe, 1 SA-120mm
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F-WOLFSPEED

RF MOSFET HEMT 28V 440166
CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
TW-E41-102B

Mfr.#: TW-E41-102B

OMO.#: OMO-TW-E41-102B-TWIN-INDUSTRIES

Protoboard, Solderless, Board 6.5"Lx2.14"W, 2 Dis-Strips, 3 Posts, 1 Term-Strips
可用性
庫存:
100
訂購:
2083
輸入數量:
CGHV1J006D-GP4的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
10
US$31.92
US$319.20
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