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IPB50R199CPATMA1

IPB50R199CPATMA1
Mfr. #:
IPB50R199CPATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
生命週期:
製造商新產品
數據表:
IPB50R199CPATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
500 V
Id - 連續漏極電流：
17 A
Rds On - 漏源電阻：
180 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
45 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
139 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
系列：
CoolMOS CE
晶體管類型：
1 N-Channel
寬度：
9.25 mm
品牌：
英飛凌科技
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
80 ns
典型的開啟延遲時間：
35 ns
第 # 部分別名：
IPB50R199CP IPB5R199CPXT SP000236092
單位重量：
0.139332 oz
Tags
IPB50R19, IPB50R1, IPB50R, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 550 V 199 mOhm 45 nC CoolMOS™ Power Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N-CH, 550V, 17A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
*** Electronics
VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ure Electronics
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***ical
Trans MOSFET N-CH 550V 13A 3-Pin(2+Tab) D2PAK T/R
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:550V; Current, Id Cont:13A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; SVHC:Cobalt dichloride
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
*** Electronics
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
***ure Electronics
N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5
***ure Electronics
N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
Single N-Channel 600 V 190 mOhm 37 nC CoolMOS™ Power Mosfet - D2PAK
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO263-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
型號 製造商 描述 庫存 價格
IPB50R199CPATMA1
DISTI # 30205356		Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$1.3840
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 550V 17A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 1000:$1.6242
IPB50R199CPATMA1
DISTI # V36:1790_06377523		Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.2870
  • 500000:$1.2890
  • 100000:$1.4070
  • 10000:$1.5940
  • 1000:$1.6240
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB50R199CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 2000
  • 6000:$1.2900
  • 10000:$1.2900
  • 2000:$1.3900
  • 4000:$1.3900
  • 1000:$1.4900
IPB50R199CPATMA1
DISTI # IPB50R199CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R - Bulk (Alt: IPB50R199CPATMA1)
Min Qty: 248
Container: Bulk		Americas - 0
  • 2480:$1.1900
  • 744:$1.2900
  • 1240:$1.2900
  • 248:$1.3900
  • 496:$1.3900
IPB50R199CPATMA1
DISTI # SP000236092		Infineon Technologies AGTrans MOSFET N-CH 550V 17A 3-Pin TO-263 T/R (Alt: SP000236092)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.2900
  • 4000:€1.3900
  • 6000:€1.3900
  • 2000:€1.4900
  • 1000:€1.9900
IPB50R199CP
DISTI # 726-IPB50R199CP		Infineon Technologies AGMOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
RoHS: Compliant		1160
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5400
  • 2000:$1.4700
  • 5000:$1.4100
IPB50R199CPATMA1
DISTI # 726-IPB50R199CPATMA1		Infineon Technologies AGMOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP
RoHS: Compliant		690
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5400
  • 2000:$1.4700
  • 5000:$1.4100
IPB50R199CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB
RoHS: Compliant		130
  • 1000:$1.3300
  • 500:$1.4000
  • 100:$1.4600
  • 25:$1.5200
  • 1:$1.6400
IPB50R199CPATMA1
DISTI # 8275280P		Infineon Technologies AGMOSFET N-CH 17A 550V COOLMOS TO263, RL775
  • 1000:£1.1820
  • 500:£1.3100
  • 250:£1.4560
  • 100:£1.5320
圖片 型號 描述
IPD60R1K4C6ATMA1

Mfr.#: IPD60R1K4C6ATMA1

OMO.#: OMO-IPD60R1K4C6ATMA1

 MOSFET LOW POWER_LEGACY
GQM2195C2A181JB12D

Mfr.#: GQM2195C2A181JB12D

OMO.#: OMO-GQM2195C2A181JB12D

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 100volt 180pF C0G 5%
GQM2195C2A181JB12D

Mfr.#: GQM2195C2A181JB12D

OMO.#: OMO-GQM2195C2A181JB12D-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 100volt 180pF C0G 5%
IPN70R1K2P7SATMA1

Mfr.#: IPN70R1K2P7SATMA1

OMO.#: OMO-IPN70R1K2P7SATMA1-INFINEON-TECHNOLOGIES

 COOLMOS P7 700V SOT-223
IPD60R1K4C6ATMA1

Mfr.#: IPD60R1K4C6ATMA1

OMO.#: OMO-IPD60R1K4C6ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 3.2A TO252-3
可用性
庫存:
690
訂購:
2673
輸入數量:
IPB50R199CPATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.92
US$2.92
10
US$2.48
US$24.80
100
US$2.15
US$215.00
250
US$2.04
US$510.00
500
US$1.83
US$915.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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