IPD60R1K4C6ATMA1

Mfr. #:: IPD60R1K4C6ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 600V 3.2A TO252-3
生命週期:: 製造商新產品
數據表:: IPD60R1K4C6ATMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: IPD60R1K4, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R1K4C6ATMA1 描述

***p One Stop Global: Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252 T/R

***et Europe: Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) TO-252

***ark: Mosfet, N Channel, 600V, 3.2A, To252-3

***Components: MOSFET N-CH 3.2A 650V COOLMOS C6 TO252

***ment14 APAC: MOSFET, N-CH, 600V, 3.2A, TO252-3

***an P&S: 600V,3.2A,N-ch power MOSFET

*** Source Electronics: MOSFET N-CH 600V 3.2A TO252-3

***ure Electronics: MOSFET LOW POWER_LEGACY

***ronik: N-CH 600V 3,2A 1400mOhm TO252-3

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

型號	製造商	描述	庫存	價格
IPD60R1K4C6ATMA1 DISTI # V72:2272_06384833	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2130	1000:$0.4490 500:$0.4852 250:$0.5391 100:$0.5454 25:$0.7782 10:$0.9510 1:$1.1350
IPD60R1K4C6ATMA1 DISTI # V36:1790_06384833	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD60R1K4C6ATMA1 DISTI # IPD60R1K4C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 3.2A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6958In Stock	1000:$0.4054 500:$0.5068 100:$0.6411 10:$0.8360 1:$0.9500
IPD60R1K4C6ATMA1 DISTI # IPD60R1K4C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 3.2A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6958In Stock	1000:$0.4054 500:$0.5068 100:$0.6411 10:$0.8360 1:$0.9500
IPD60R1K4C6ATMA1 DISTI # IPD60R1K4C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 3.2A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.3280 5000:$0.3321 2500:$0.3567
IPD60R1K4C6ATMA1 DISTI # 30679527	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.2A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2130	1000:$0.4490 500:$0.4852 250:$0.5391 100:$0.5454 25:$0.7782 20:$0.9510
IPD60R1K4C6ATMA1 DISTI # IPD60R1K4C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 3.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R1K4C6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2969 15000:$0.3029 10000:$0.3129 5000:$0.3249 2500:$0.3369
IPD60R1K4C6ATMA1 DISTI # 13AC9044	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	4314	1000:$0.3790 500:$0.4100 250:$0.4420 100:$0.4740 50:$0.5610 25:$0.6470 10:$0.7340 1:$0.8790
IPD60R1K4C6ATMA1 DISTI # 726-IPD60R1K4C6ATMA1	Infineon Technologies AG	MOSFET LOW POWER_LEGACY RoHS: Compliant	16851	1:$0.8700 10:$0.7270 100:$0.4690 1000:$0.3750
IPD60R1K4C6ATMA1 DISTI # 2726051	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.2A, TO-252-3	4314	500:£0.3150 250:£0.3430 100:£0.3690 25:£0.5780 5:£0.6420
IPD60R1K4C6ATMA1 DISTI # 2726051	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.2A, TO-252-3 RoHS: Compliant	4314	1000:$0.6490 500:$0.8110 100:$1.1100 10:$1.4200 1:$1.6300

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