FF23MR12W1M1B11BOMA1

Mfr. #:: FF23MR12W1M1B11BOMA1
製造商:: Infineon Technologies
描述:: MOSFET 2 N-CH 1200V 50A MODULE
生命週期:: 製造商新產品
數據表:: FF23MR12W1M1B11BOMA1 數據表
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更多信息:: FF23MR12W1M1B11BOMA1 更多信息

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF23MR12W1M1B11BOMA1 描述

***ure Electronics: N-Channel 1200 V 23 mOhm CoolSiC EasyDual PressFIT/NTC Mosfet Module

***ical: Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray

***i-Key: MOSFET 2 N-CH 1200V 50A MODULE

***ronik: IGBT 1200V 50A 4,50V

***ark: Mosfet Module, N-Ch, 1.2Kv, 50A; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:20mW; Operating Temperature Max:150°C; Product Range:CoolSic Series; SVHC:No SVHC (27-Jun-2018)

***nell: MODULO MOSFET, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):-; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:20mW; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolSic Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger

FF23MR12W1M1B11BOMA1 更多信息

1200V CoolSiC™ Modules: Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

Gen 5 1200V CoolSiC™ Schottky Diodes: Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.

Market price

型號	製造商	描述	庫存	價格
FF23MR12W1M1B11BOMA1 DISTI # V99:2348_18204378	Infineon Technologies AG	LOW POWER EASY	16	1:$92.6000
FF23MR12W1M1B11BOMA1 DISTI # FF23MR12W1M1B11BOMA1-ND	Infineon Technologies AG	MOSFET 2 N-CH 1200V 50A MODULE RoHS: Compliant Min Qty: 1 Container: Tray	16In Stock	1:$92.7700
FF23MR12W1M1B11BOMA1 DISTI # 33632614	Infineon Technologies AG	LOW POWER EASY	50	1:$79.6308
FF23MR12W1M1B11BOMA1 DISTI # 31241752	Infineon Technologies AG	LOW POWER EASY	16	1:$92.6000
FF23MR12W1M1B11BOMA1 DISTI # FF23MR12W1M1B11BOMA1	Infineon Technologies AG	IGBTs - Trays (Alt: FF23MR12W1M1B11BOMA1) RoHS: Compliant Min Qty: 24 Container: Tray	Americas - 0	240:$72.0900 144:$73.7900 96:$75.6900 48:$77.6900 24:$78.6900
FF23MR12W1M1B11BOMA1 DISTI # SP001602224	Infineon Technologies AG	IGBTs (Alt: SP001602224) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€71.5900 500:€72.5900 100:€73.4900 50:€74.7900 25:€78.6900 10:€79.5900 1:€81.9900
FF23MR12W1M1B11BOMA1 DISTI # 24AC8570	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes	18	25:$87.6400 10:$90.6700 5:$94.9400 1:$96.7200
FF23MR12W1M1B11BOMA1 DISTI # 726-FF23MR12W1M1B11	Infineon Technologies AG	Discrete Semiconductor Modules RoHS: Compliant	86	1:$95.7600 5:$94.0000 10:$89.7700 25:$86.7700
FF23MR12W1M1B11BOMA1 DISTI # 2771413	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 50A	18	50:£64.8900 10:£66.2100 5:£71.7200 1:£73.0700
FF23MR12W1M1B11BOMA1 DISTI # XSKDRABV0050327	Infineon Technologies AG	RoHS: Compliant	65 in Stock0 on Order	65:$107.0400 24:$114.6900
FF23MR12W1M1B11BOMA1 DISTI # 2771413	Infineon Technologies AG	MOSFET MODULE, N-CH, 1.2KV, 50A RoHS: Compliant	18	1:$141.5600