CSD85312Q3E

Mfr. #:: CSD85312Q3E
描述:: MOSFET 2N-CH 20V 39A 8VSON
生命週期:: 製造商新產品
數據表:: CSD85312Q3E 數據表
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更多信息:: CSD85312Q3E 更多信息 CSD85312Q3E Product Details

產品屬性
屬性值

製造商: 德州儀器

產品分類: FET - 陣列

系列: 場效應管

打包: Digi-ReelR 替代包裝

安裝方式: 貼片/貼片

商品名: 場效應管

包裝盒: 8-PowerVDFN

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: 8-VSON (3.3x3.3)

配置: 雙公共源

FET型: 2 N-Channel (Dual) Common Source

最大功率: 2.5W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: 2390pF @ 10V

FET-Feature: Logic Level Gate, 5V Drive

Current-Continuous-Drain-Id-25°C: 39A

Rds-On-Max-Id-Vgs: 12.4 mOhm @ 10A, 8V

Vgs-th-Max-Id: 1.4V @ 250μA

柵極電荷-Qg-Vgs: 15.2nC @ 4.5V

鈀功耗: 2.5 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 6 ns

上升時間: 27 ns

VGS-柵極-源極-電壓: 10 V

Id 連續漏極電流: 76 A

Vds-漏-源-擊穿電壓: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 1.1 V

Rds-On-Drain-Source-Resistance: 14 mOhms

晶體管極性: N通道

典型關斷延遲時間: 24 ns

典型開啟延遲時間: 11 ns

Qg-門電荷: 11.7 nC

正向跨導最小值: 99 S

Tags: CSD85, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD85312Q3E 描述

***as Instruments: 20V, N ch NexFET MOSFET™, dual common source SON3x3, 14mOhm 8-VSON -55 to 150

***ark: TRANSISTOR, MOSFET, N CHANNEL, 20V, 39A, SON8

***p One Stop Global: Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R

***et Europe: Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R

***i-Key: MOSFET 2N-CH 20V 39A 8VSON

CSD85312Q3E 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型號	描述	庫存	價格
CSD85312Q3E DISTI # 296-37187-1-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-6-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-2-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.3844 5000:$0.3994 2500:$0.4204
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R - Tape and Reel (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3559 5000:$0.3549 10000:$0.3539 15000:$0.3529 25000:$0.3529
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.5489 10:€0.4939 25:€0.4489 50:€0.4119 100:€0.3799 500:€0.3529 1000:€0.3289
CSD85312Q3E	Dual 20-V N-Channel NexFET&#153,Power MOSFETs, CSD85312Q3E	4740	1000:$0.3100 750:$0.3500 500:$0.4300 250:$0.5300 100:$0.5800 25:$0.6700 10:$0.7300 1:$0.8200
CSD85312Q3E	Power Field-Effect Transistor, 12A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	83400	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400
CSD85312Q3E DISTI # 595-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs RoHS: Compliant	3104	1:$0.9000 10:$0.7700 100:$0.5870 500:$0.5190 1000:$0.4100 2500:$0.3640

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	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 20V 39A 8VSON