SI7900AEDN-T1-E3

Mfr. #:: SI7900AEDN-T1-E3
製造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
生命週期:: 製造商新產品
數據表:: SI7900AEDN-T1-E3 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SI7900AEDN-T1-E3 更多信息

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 陣列

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI7900AEDN-T1

安裝方式: 貼片/貼片

商品名: TrenchFET/PowerPAK

包裝盒: PowerPAKR 1212-8 Dual

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: PowerPAKR 1212-8 Dual

配置: 雙重的

FET型: 2 N-Channel (Dual) Common Drain

最大功率: 1.5W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: -

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

柵極電荷-Qg-Vgs: 16nC @ 4.5V

鈀功耗: 1.5 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 1300 ns

上升時間: 1300 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 6 A

Vds-漏-源-擊穿電壓: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

晶體管極性: N通道

典型關斷延遲時間: 8600 ns

典型開啟延遲時間: 850 ns

通道模式: 增強

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-E3 更多信息

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型號	製造商	描述	庫存	價格
SI7900AEDN-T1-E3 DISTI # V72:2272_09216403	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774 1:$1.3583
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	42000In Stock	3000:$0.7546
SI7900AEDN-T1-E3 DISTI # 25790064	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 11:$1.1774
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7129 6000:$0.6919 12000:$0.6629 18000:$0.6449 30000:$0.6279
SI7900AEDN-T1-E3 DISTI # 06J8175	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):36mohm,Rds(on) Test Voltage Vgs:12V,Power Dissipation Pd:1.5W, RoHS Compliant: Yes	0	1:$0.5600 3000:$0.5560 6000:$0.5290 12000:$0.4690
SI7900AEDN-T1-E3 DISTI # 09X6454	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.1000 10:$1.0600 100:$0.8350 250:$0.7940 500:$0.7410 1000:$0.5940
SI7900AEDN-T1-E3 DISTI # 781-SI7900AEDN-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2994	1:$1.7200 10:$1.4200 100:$1.0900 500:$0.9320 1000:$0.7350 3000:$0.6860
SI7900AEDN-T1-E3	Vishay Siliconix	6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2905	1456:$0.4840 326:$0.5500 1:$1.7600
SI7900AEDN-T1-E3 DISTI # C1S803601003759	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774
SI7900AEDN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8	Americas -

相關產品

圖片	型號	描述
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	全新原裝
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	全新原裝
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	全新原裝
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	全新原裝

可用性

庫存:: Available
訂購:: 2500
輸入數量:

SI7900AEDN-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.73~~; ~~US$0.73~~

10: ~~US$0.69~~; ~~US$6.90~~

100: ~~US$0.65~~; ~~US$65.34~~

500: ~~US$0.62~~; ~~US$308.55~~

1000: ~~US$0.58~~; ~~US$580.80~~

從...開始

SI7900AEDN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes