SI7900AEDN-T1-GE3

Mfr. #:: SI7900AEDN-T1-GE3
製造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
生命週期:: 製造商新產品
數據表:: SI7900AEDN-T1-GE3 數據表
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ECAD Model:
更多信息:: SI7900AEDN-T1-GE3 更多信息

產品屬性
屬性值

製造商: 威世

產品分類: FET - 陣列

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI7900AEDN-GE3

安裝方式: 貼片/貼片

商品名: TrenchFET/PowerPAK

包裝盒: PowerPAKR 1212-8 Dual

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: PowerPAKR 1212-8 Dual

配置: 雙重的

FET型: 2 N-Channel (Dual) Common Drain

最大功率: 1.5W

晶體管型: 2 N-Channel

漏源電壓 Vdss: 20V

輸入電容-Ciss-Vds: -

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

柵極電荷-Qg-Vgs: 16nC @ 4.5V

鈀功耗: 1.5 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 1300 ns

上升時間: 1300 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 6 A

Vds-漏-源-擊穿電壓: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

晶體管極性: N通道

典型關斷延遲時間: 8600 ns

典型開啟延遲時間: 850 ns

通道模式: 增強

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-GE3 描述

***ied Electronics & Automation: SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212

***Components: In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3

***ical: Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 20V 6A PPAK 1212-8

SI7900AEDN-T1-GE3 更多信息

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型號	製造商	描述	庫存	價格
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5236
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI7900AEDN-T1-GE3 DISTI # 70617004	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant	0	300:$0.8200 600:$0.7500 1500:$0.6900 3000:$0.6100
SI7900AEDN-T1-GE3 DISTI # 781-SI7900AEDN-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2990	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI7900AEDN-T1-GE3	Vishay Intertechnologies		960

相關產品

圖片	型號	描述
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	全新原裝
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	全新原裝
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	全新原裝
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	全新原裝

可用性

庫存:: Available
訂購:: 3000
輸入數量:

SI7900AEDN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.65~~; ~~US$0.65~~

10: ~~US$0.62~~; ~~US$6.20~~

100: ~~US$0.59~~; ~~US$58.71~~

500: ~~US$0.55~~; ~~US$277.25~~

1000: ~~US$0.52~~; ~~US$521.90~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

SI7900AEDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes