PGA26E19BA

Mfr. #:: PGA26E19BA
製造商:: Panasonic
描述:: MOSFET MOSFET 600VDC 190mohm X-GaN
生命週期:: 製造商新產品
數據表:: PGA26E19BA 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: PGA26E19BA 更多信息

產品屬性
屬性值

製造商: 松下

產品分類: 晶體管 - FET、MOSFET - 單

RoHS: 細節

通道數: 1 Channel

Vgs th - 柵源閾值電壓: 4 V

Qg - 柵極電荷: 120 nC

技術: 矽

頻道模式: 增強

品牌: 松下

配置: 1 N-Channel

開發套件: -

秋季時間: -

正向跨導 - 最小值: -

最低工作溫度: - 55 C

上升時間: -

系列: 氮化鎵場效應管

晶體管類型: 1 N-Channel

典型關斷延遲時間: -

典型開啟延遲時間: -

Tags: PGA26E1, PGA26, PGA2, PGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PGA26E19BA 描述

***asonic SCT: GaN Power Devices, 600V, DFN 8x8, RoHS

PGA26E19BA 更多信息

PGA26E X-GaN Power Transistors: Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.

X-GaN Power Solutions: Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.

Market price

型號	製造商	描述	庫存	價格
PGA26E19BA DISTI # 667-PGA26E19BA	Panasonic Electronic Components	MOSFET MOSFET 600VDC 190mohm X-GaN RoHS: Compliant	0	1:$18.2900 10:$17.0700 25:$16.2100
PGA26E19BA-SWEVB008 DISTI # 667-PGA26E19BASWEV8	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB RoHS: Compliant	19	1:$400.0000
PGA26E19BA-SWEVB006 DISTI # 667-PGA26E19BASWEVB6	Panasonic Electronic Components	Power Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB RoHS: Compliant	3	1:$300.0000
PGA26E19BA-DB001 DISTI # 667-PGA26E19BADB001	Panasonic Electronic Components	Power Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN RoHS: Compliant	0	1:$45.0000

相關產品

圖片	型號	描述
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA	MOSFET MOSFET 600VDC 190mohm X-GaN
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E07-DB001 OMO.#: OMO-PGA26E07-DB001-1190	全新原裝
	Mfr.#: PGA26E07-SWEVB008 OMO.#: OMO-PGA26E07-SWEVB008-1190	全新原裝
	Mfr.#: PGA26E07BA OMO.#: OMO-PGA26E07BA-1190	MOSFET MOSFET 600VDC 70mohm X-GaN
	Mfr.#: PGA26E19-DB001 OMO.#: OMO-PGA26E19-DB001-1190	全新原裝
	Mfr.#: PGA26E19-SWEVB008 OMO.#: OMO-PGA26E19-SWEVB008-1190	全新原裝
	Mfr.#: PGA26E19BA OMO.#: OMO-PGA26E19BA-1190	MOSFET MOSFET 600VDC 190mohm X-GaN