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PGA26E19BA

PGA26E19BA
Mfr. #:
PGA26E19BA
製造商:
Panasonic
描述:
MOSFET MOSFET 600VDC 190mohm X-GaN
生命週期:
製造商新產品
數據表:
PGA26E19BA 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
PGA26E19BA 更多信息
產品屬性
屬性值
製造商：
松下
產品分類：
MOSFET
RoHS：
Y
技術：
氮化鎵
安裝方式：
貼片/貼片
包裝/案例：
DFN-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
13 A
Rds On - 漏源電阻：
190 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
2 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
69 W
配置：
單身的
頻道模式：
增強
商品名：
氮化鎵
系列：
PGA26E19BA
品牌：
松下
秋季時間：
2.4 ns
濕氣敏感：
是的
產品類別：
MOSFET
上升時間：
5.2 ns
出廠包裝數量：
2000
子類別：
MOSFET
典型關斷延遲時間：
3.4 ns
典型的開啟延遲時間：
3.4 ns
Tags
PGA26E1, PGA26, PGA2, PGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Power Field-Effect Transistor,
***asonic SCT
GaN Power Devices, 600V, DFN 8x8, RoHS
PGA26E X-GaN Power Transistors
Panasonic PGA26E07BA and PGA26E19BA X-GaN Power Transistors are 600V Gallium Nitride power devices based on Gate Injection Transistor (GiT) technology. PGA26E X-GaN power devices deliver Normally-Off operation with extremely high-speed switching characteristics and zero recovery loss.
X-GaN Power Solutions
Panasonic 600V Gallium Nitride (X-GaN) is a very hard, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form, it resists cracking and can be deposited in a thin film on Sapphire (AL2O3) or Silicon Carbide (SiC), despite the mismatch in their lattice constants. X-GaN can be doped with Silicon (Si) or with Oxygen to n-type and with Magnesium (Mg) to p-type; however, the Si and Mg atoms change the way the X-GaN crystals grow, introducing tensile stresses and making them brittle.
型號 製造商 描述 庫存 價格
PGA26E19BA
DISTI # 667-PGA26E19BA		Panasonic Electronic ComponentsMOSFET MOSFET 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$18.2900
  • 10:$17.0700
  • 25:$16.2100
PGA26E19BA-SWEVB008
DISTI # 667-PGA26E19BASWEV8		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
RoHS: Compliant		19
  • 1:$400.0000
PGA26E19BA-SWEVB006
DISTI # 667-PGA26E19BASWEVB6		Panasonic Electronic ComponentsPower Management IC Development Tools 600Vdc 190mOhm X-GaN Chopper EVB
RoHS: Compliant		3
  • 1:$300.0000
PGA26E19BA-DB001
DISTI # 667-PGA26E19BADB001		Panasonic Electronic ComponentsPower Management IC Development Tools SMD-ThruHole ConvKit 600VDC 190mohm X-GaN
RoHS: Compliant		0
  • 1:$45.0000
圖片 型號 描述
SN6505BDBVR

Mfr.#: SN6505BDBVR

OMO.#: OMO-SN6505BDBVR

 Power Management Specialized - PMIC Transformer driver for isolated power
GS-065-008-1-L

Mfr.#: GS-065-008-1-L

OMO.#: OMO-GS-065-008-1-L

 MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

 MOSFET 650V 15A E-Mode GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

 MOSFET 650V 30A E-Mode GaN
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D

 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
LMG1020YFFR

Mfr.#: LMG1020YFFR

OMO.#: OMO-LMG1020YFFR

 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
C2M0160120D

Mfr.#: C2M0160120D

OMO.#: OMO-C2M0160120D-WOLFSPEED

 MOSFET N-CH 1200V 19A TO-247
可用性
庫存:
309
訂購:
2292
輸入數量:
PGA26E19BA的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$18.29
US$18.29
10
US$17.07
US$170.70
25
US$16.21
US$405.25
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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