OMO ElectronicOMO Electronic
Expand menu
0 購物車

IXFK32N80Q3

IXFK32N80Q3
Mfr. #:
IXFK32N80Q3
製造商:
Littelfuse
描述:
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
生命週期:
製造商新產品
數據表:
IXFK32N80Q3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK32N80Q3 DatasheetIXFK32N80Q3 Datasheet (P4-P5)
ECAD Model:
更多信息:
IXFK32N80Q3 更多信息
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-264-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
32 A
Rds On - 漏源電阻：
270 mOhms
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
140 nC
最高工作溫度：
+ 150 C
Pd - 功耗：
1 kW
配置：
單身的
商品名：
高功率場效應晶體管
打包：
管子
系列：
IXFK32N80
晶體管類型：
1 N-Channel
品牌：
IXYS
產品類別：
MOSFET
上升時間：
300 ns
出廠包裝數量：
25
子類別：
MOSFET
單位重量：
0.264555 oz
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
***i-Key
MOSFET N-CH 800V 32A TO264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail
***ure Electronics
FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264
***nell
IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
***hard Electronics
STMICROELECTRONICS 2STA1943Bipolar (BJT) Single Transistor, PNP, 230 V, 30 MHz, 150 W, 8 A, 80
***ure Electronics
2STA1943 Series PNP 230 V 15 A Epitaxial Planar Bipolar Transistor - TO-264
***icroelectronics
High power PNP epitaxial planar bipolar transistor
***ical
Trans GP BJT PNP 230V 15A 3-Pin TO-264 Tube
*** Electronic Components
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
***r Electronics
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
***ment14 APAC
Transistor, PNP TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:150W;
***nell
TRANSISTOR, PNP TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 3V; Continuous Collector Current Ic Max: 15A; Current Ic Continuous a Max: 8A; Current Ic hFE: 1A; Device Marking: 2STA1943; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 80; Power Dissipation Ptot Max: 150W; Termination Type: Through Hole; Voltage Vcbo: 230V
***icroelectronics
High power PNP epitaxial planar bipolar transistor
*** Electronics
STMICROELECTRONICS 2STA2121Bipolar (BJT) Single Transistor, PNP, -250 V, 25 MHz, 220 W, -17 A, 80
***ical
Trans GP BJT PNP 250V 17A 3-Pin TO-264 Tube
***S.I.T. Europe - USA - Asia
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
*** Electronic Components
Bipolar Transistors - BJT PNP Power Transisto
***nell
TRANS PNP 250V 17A BIT-LA TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 220W; DC Collector Current: -17A; DC Current Gain hFE: 80hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): -3V; Current Ic Continuous a Max: -8A; Gain Bandwidth ft Typ: 25MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Through Hole; Transistor Type: Power Bipolar
***hard Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
型號 製造商 描述 庫存 價格
IXFK32N80Q3
DISTI # IXFK32N80Q3-ND		IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		50In Stock
  • 100:$16.3200
  • 25:$17.7600
  • 1:$21.1200
IXFK32N80Q3
DISTI # 747-IXFK32N80Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
RoHS: Compliant		0
  • 1:$24.2900
  • 10:$22.0800
  • 25:$20.4200
  • 50:$18.7900
  • 100:$18.3300
  • 250:$16.8000
  • 500:$15.2500
圖片 型號 描述
IXFK32N100X

Mfr.#: IXFK32N100X

OMO.#: OMO-IXFK32N100X

 MOSFET 1000V 32A TO-264 Power MOSFET
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P

 MOSFET 600V 36A
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

 MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N60C

Mfr.#: IXFK32N60C

OMO.#: OMO-IXFK32N60C-1190

 全新原裝
IXFK38N80Q2TRL

Mfr.#: IXFK38N80Q2TRL

OMO.#: OMO-IXFK38N80Q2TRL-1190

 全新原裝
IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3-IXYS-CORPORATION

 200V/300A ULTRA JUNCTION X3-CLAS
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

 Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK35N50

Mfr.#: IXFK35N50

OMO.#: OMO-IXFK35N50-IXYS-CORPORATION

 MOSFET 35 Amps 500V 0.15 Rds
IXFK38N80Q2

Mfr.#: IXFK38N80Q2

OMO.#: OMO-IXFK38N80Q2-IXYS-CORPORATION

 MOSFET 38 Amps 800V 0.22 Rds
IXFK360N10T

Mfr.#: IXFK360N10T

OMO.#: OMO-IXFK360N10T-IXYS-CORPORATION

 MOSFET N-CH 100V 360A TO-264
可用性
庫存:
Available
訂購:
3000
輸入數量:
IXFK32N80Q3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$24.29
US$24.29
10
US$22.08
US$220.80
25
US$20.42
US$510.50
50
US$18.79
US$939.50
100
US$18.33
US$1 833.00
250
US$16.80
US$4 200.00
500
US$15.25
US$7 625.00
從...開始
最新產品
More Newest Products
Top