TGF2060

Mfr. #:: TGF2060
製造商:: Qorvo
描述:: RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
生命週期:: 製造商新產品
數據表:: TGF2060 數據表
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ECAD Model:
更多信息:: TGF2060 更多信息

產品屬性
屬性值

製造商: TriQuint (Qorvo)

產品分類: 晶體管 - FET、MOSFET - 單

系列: 轉化生長因子

打包: 凝膠包

部分別名: 1098619

安裝方式: 貼片/貼片

工作溫度範圍: - 65 C to + 150 C

技術: 砷化鎵

配置: 單身的

晶體管型: pHEMT

獲得: 12 dB

鈀功耗: 2.1 W

最高工作溫度: + 150 C

最低工作溫度: - 65 C

工作頻率: 20 GHz

Id 連續漏極電流: 194 mA

Vds-漏-源-擊穿電壓: 8 V

正向跨導最小值: 232 mS

VGS-柵極-源極擊穿電壓: - 3 V

NF-噪聲係數: 1.4 dB

P1dB-壓縮點: 28 dBm

Tags: TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2060 更多信息

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2040/60 Discrete GaAs pHEMTs: Qorvo TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. Qorvo TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.Learn More

Market price

型號	製造商	描述	庫存	價格
TGF2060 DISTI # 772-TGF2060	Qorvo	RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm RoHS: Compliant	100	100:$7.3300 300:$6.8500 500:$6.4000 1000:$5.9800

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