TGF2929-FS

TGF2929-FS
Mfr. #:
TGF2929-FS
製造商:
Qorvo
描述:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
生命週期:
製造商新產品
數據表:
TGF2929-FS 數據表
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ECAD Model:
更多信息:
TGF2929-FS 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 MOSFET 晶體管
RoHS:
Y
晶體管極性:
N通道
技術:
氮化鎵碳化矽
Id - 連續漏極電流:
12 A
Vds - 漏源擊穿電壓:
28 V
獲得:
14 dB
輸出功率:
107 W
打包:
托盤
工作頻率:
3.5 GHz
類型:
射頻功率MOSFET
品牌:
科沃
濕氣敏感:
是的
Pd - 功耗:
144 W
產品類別:
射頻 MOSFET 晶體管
出廠包裝數量:
25
子類別:
MOSFET
Vgs - 柵源電壓:
145 V
Vgs th - 柵源閾值電壓:
- 2.9 V
第 # 部分別名:
1123716
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型號 製造商 描述 庫存 價格
TGF2929-FS
DISTI # 772-TGF2929-FS
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
23
  • 1:$351.0000
  • 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB
DISTI # 772-TGF2929-FS/FL-EV
QorvoRF Development Tools DC-3.5GHz 100W Eval Board
RoHS: Compliant
1
  • 1:$875.0000
1123716
DISTI # TGF2929-FS
QorvoRF POWER TRANSISTOR
RoHS: Compliant
10
  • 1:$90.0000
圖片 型號 描述
TGF2977-SM

Mfr.#: TGF2977-SM

OMO.#: OMO-TGF2977-SM

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
TGF2954

Mfr.#: TGF2954

OMO.#: OMO-TGF2954

RF JFET Transistors DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM-318

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957-318

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2979-SM-EVB

Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
TGF2942

Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

全新原裝
TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

全新原裝
可用性
庫存:
Available
訂購:
2000
輸入數量:
TGF2929-FS的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
25
US$316.78
US$7 919.50
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