We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| FMI20N50E | ISC | I²PAK/TO-262 | 5000 | |
| FMI20N50ES | ISC | I²PAK/TO-262 | 5000 | |
| FMI20N50E DISTI # FE0000000000987 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ESSC DISTI # FE0000000004529 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMI20N50ES DISTI # FE0000000000988 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: FMI20N50E OMO.#: OMO-FMI20N50E-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI20N50ES OMO.#: OMO-FMI20N50ES-1190 |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMI27851 OMO.#: OMO-FMI27851-1190 |
全新原裝 |