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FMI-C20536 |
全新原裝 |
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| FMI03N60E |
Power Field-Effect Transistor, 3A I(D),600V,2.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI05N50E |
Power Field-Effect Transistor, 5A I(D),500V,1.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI05N60E |
Power Field-Effect Transistor, 5.5A I(D),600V,1.3ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI06034R7KT |
全新原裝 |
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| FMI07N50E |
Power Field-Effect Transistor, 6.5A I(D),500V,0.85ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI08N80E |
Power Field-Effect Transistor, 28A I(D),500V,0.19ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI10N60E |
Power Field-Effect Transisto |
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| FMI11N60E |
Power Field-Effect Transistor, 11A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI12N50E |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI12N50ES |
Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI13N60E |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI13N60ES |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI161JZ |
全新原裝 |
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| FMI16N50E |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI16N50ES |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI16N60E |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI16N60ES |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI20N50E |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI20N50ES |
Power Field-Effect Transistor, 20A I(D),500V,0.31ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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| FMI27851 |
全新原裝 |
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| FMI45D |
全新原裝 |
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| FMI49N20T2 |
Power Field-Effect Transistor, 49AI(D),200V,0.047ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
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| FMI65N15T2 |
Insulated Gate Bipolar Transistor,225AI(C),1200VV(BR)CES, N-Channel |
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| FMI80N10T2 |
Power Field-Effect Transistor, 80AI(D),100V,0.0128ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
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| FMIC |
全新原裝 |
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| FMIC-2448 |
全新原裝 |
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| FMIC-5D5D-100 FT. |
全新原裝 |
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| FMIG100J7CSB1W |
全新原裝 |
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| FMIPSS-125-101M |
全新原裝 |
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| FMIS-19581/82 |
全新原裝 |
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| FMIXP425BB |
全新原裝 |
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